MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3015LSSQ-13


MOSFET Single -30V P-Ch Enh FET -20Vgss
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Diodes Incorporated 2197
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AUD 0.6896
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- 13 A- 30 V17 mOhmsP - Channel - 1 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel20 V60.4 nCEnhancement  
SQJ459EP-T1_NE3


MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2197
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AUD 0.8882
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FDMC4435BZ


Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
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ON Semiconductor 2196
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AUD 0.7095
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8.5 A30 V20 mOhmsP - Channel 3 V- 55 C+ 150 C2.3 WSMD/SMTPOWER - 33 - 8Reel , Cut TapeSi1 Channel- 25 V , 25 V53 nCEnhancement PowerTrench
NTD250N65S3H


MOSFET SUPERFET3 FAST 250MOHM DPAK
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ON Semiconductor 2196
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AUD 2.3183
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13 A650 V250 mOhmsN - Channel 4 V- 55 C+ 150 C106 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V24 nCEnhancement  
FDS86140


N-Channel 100 V 11.2A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
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ON Semiconductor 2196
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AUD 2.333
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11.2 A100 V16 mOhmsN - Channel   + 150 C5 WSmd/SmtSOIC - 8ReelSi1 Channel    Powertrench
SPA17N80C3


MOSFET COOL MOS PWR TRANS 800V 17A
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Infineon 2196
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AUD 3.1687
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17 A800 V290 mOhmsN - Channel 2.1 V- 55 C+ 150 C42 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel10 V177 nCEnhancement Coolmos
FDD86110


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 2192
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AUD 1.8654
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12.5 A100 V10.2 mOhmsN - Channel  - 55 C+ 150 C3.1 WThrough HoleTO - 252ReelSi1 Channel20 V25 nCEnhancement Powertrench
KIA3510AD


MOSFET N Trench 100V 70A 4V @ 250uA 11 mΩ @ 50A,10V TO-252-2 (DPAK) RoHS
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KIA 500
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AUD 0.5525
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FDMS3672


N-Channel 100 V 7.4A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
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ON Semiconductor 0
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AUD 1.43
Multiples of: 3000

7.4 A100 V19 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtMLP - 8Reelsi1 channel20 V enhancement power stage
YJD45G10AQ


TO-252 MOSFETs ROHS
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Yangjie 0
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AUD 0.5118
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