MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPC8107


SOP-8 MOSFETs ROHS
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Youtai 2187
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AUD 0.2704
Multiples of: 5

                   
WNM2020A-3/TR


SOT-23 MOSFETs ROHS
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Will Semiconductor 2187
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AUD 0.3311
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SQJB48EP-T1_GE3


MOSFET DUAL N-CHANNEL 40-V (D-S) MOSFET
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Vishay 2187
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AUD 0.832
Multiples of: 1

                   
WNMD2188-10/TR


CSP-10L MOSFETs ROHS
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Will Semiconductor 2187
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AUD 0.4961
Multiples of: 1

                   
SQS178ELNW-T1_GE3


MOSFETs SQS178ELNW
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Vishay 2185
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AUD 0.6534
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54 A72 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C65 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
SH8KA7GZETB


MOSFET 30V NCH+NCH POWER
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ROHM 2185
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AUD 1.4136
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15 A30 V9.3 mOhmsN - Channel 1 V- 55 C+ 150 C4.6 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V81 nCEnhancement  
SH8K12TB1


MOSFETs TRNSISTR 4V DRIVE NCH+NCH MOSFET
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ROHM 2183
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AUD 0.6403
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5 A30 V30 mOhms , 30 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V4 nCEnhancement  
PMV213SN,215


Transistor: N-MOSFET; 100V; 1.2A; Idm: 7.6A; 2W; SOT23-3
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Nexperia 2183
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AUD 0.8074
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236ABReel       
SI3430DV-T1-GE3


Vishay Semiconductors MOSFET 100V 2.4A 2.0W 170mohm 10V
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Vishay 2181
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AUD 1.2656
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2.4 A100 V170 mOhmsN - Channel  - 55 C+ 150 C1.14 WSmd/SmtTSOP - 6ReelSi1 Channel20 V Enhancement Trenchfet
2N7002BK-MS


SOT-23 MOSFETs ROHS
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MSKSEMI 2085
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AUD 0.0119
Multiples of: 50

                   
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