MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JMTK440P04A


TO-252-2 MOSFETs ROHS
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JieJie 2391
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AUD 0.1715
Multiples of: 5

                   
FDC608PZ-VB


30V P Channel SOT23-6 MOSFETs ROHS
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VBsemi Elec 2391
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AUD 0.1965
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MOT7N50SD


TO-252-2 MOSFETs ROHS
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MOT 2391
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AUD 0.2351
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HSBB0096


PRPAK-8(3x3) MOSFETs ROHS
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HUASHUO 2391
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AUD 0.3413
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DMNH10H028SK3-13


MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W
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Diodes Incorporated 2391
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AUD 1.2297
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55 A100 V28 mOhmsN - Channel 2.5 V- 55 C+ 175 C2 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V36 nCEnhancement  
AG084FGD3HRBTL


MOSFETs Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2391
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AUD 2.1672
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80 A40 V2.2 mOhmsN - Channel 2.5 V- 55 C+ 175 C142 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V82 nCEnhancement  
MCH6604-TL-E


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor 2390
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AUD 0.2167
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250 mA50 V7.8 OhmsN - Channel  - 55 C+ 150 C800 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel10 V1.57 nC   
NVD5C454NLT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 2390
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AUD 0.4507
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88 A40 V3.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C56 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V43 nCEnhancementAec - Q101 
BSP88H6327XTSA1


Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
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Infineon 2389
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AUD 0.2693
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            Sipmos      
ZXMP6A17KTC


P-Channel 60 V 4.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3
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Diodes Incorporated 2389
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AUD 0.5418
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   P - channel  - 55 C+ 150 C Smd/smtTO 252 - 3LReel       
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