MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSF40N10


MOSFET N Trench 100V 40A (Tc) 4V @ 250uA 38 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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Winsok 2396
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AUD 0.3953
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HUF76609D3ST


MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
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ON Semiconductor 2395
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AUD 0.5914
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   n - channel  - 55 C+ 175 C smd/smtTO - 252AAReel       
STD3NK60ZT4


MOSFET N Trench 600V 2.4A (Tc) 4.5V @ 50uA 3.6 Ω @ 1.2A,10V DPAK RoHS
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STMicroelectronics 2395
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AUD 0.7103
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2.4 A600 V3.6 OhmsN - Channel30 V - 55 C+ 150 C45 WSmd/SmtDPAK - 3Reel    Enhancement  
CSD87313DMS


MOSFET 30-V, N channel NexFET power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm 8-WSON -55 to 150
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Texas Instruments 2394
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AUD 1.5735
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17 A30 V5.5 mOhmsN - Channel 600 mV- 55 C+ 150 C2.7 WSmd/SmtWSON - 8Cut TapeSi2 Channel10 V28 nC , 28 nCEnhancement Nexfet
DMNH4011SPSQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 2393
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AUD 0.699
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         Smd/SmtPowerdi5060 - 8Cut TapeSi    Aec - Q101 
RD3P200SNTL1


MOSFET NCH 100V 20A POWER
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ROHM 2393
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AUD 1.0786
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20 A100 V46 mOhmsN - Channel 2.5 V- 55 C+ 150 C20 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V55 nCEnhancement  
ASD70R600E


750V 8A 600m 86W 3.5V TO-252 MOSFETs ROHS
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ANHI 2392
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AUD 0.4943
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SH8MC4TB1


MOSFETs 60V 3.5A/4A, Dual Nch+Pch, SOP8, Power MOSFET
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ROHM 2392
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AUD 0.7175
Multiples of: 1

3.5 A , 4 A60 V , 60 V95 mOhms , 96 mOhmsN - Channel, P - Channel 2.5 V , 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.1 nC , 17.3 nCEnhancement  
RD3P02BATTL1


MOSFETs RD3P02BAT is a low on-resistance power MOSFET suitable for switching applications.
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ROHM 2392
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AUD 1.0836
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           Reel , Cut TapeSi      
Hot BSC042NE7NS3GATMA1


Transistor: N-MOSFET; unipolar; 75V; 100A; 125W; PG-TDSON-8
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Infineon 2392
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AUD 1.1722
Multiples of: 1

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