MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR2905PBF-HXY


60V 30A 22mΩ@10V,15A 34.7W 2.5V@250uA N Channel TO-252-2L MOSFETs ROHS
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HXY MOS 2415
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AUD 0.1773
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HSU3031


MOSFET P Channel -30V 70A 2.5V @ 250uA 7.2mΩ @ 20A,10V TO-252 RoHS
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HUASHUO 2405
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AUD 0.3709
Multiples of: 5

                   
TMN6030D


TO-252-3L MOSFETs ROHS
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Tritech-MOS 2400
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AUD 0.1956
Multiples of: 5

                   
LWS1H90A4


TO-252 MOSFETs ROHS
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Lewa Micro 2400
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AUD 0.2166
Multiples of: 5

                   
RS1E240GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2400
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AUD 0.5024
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24 A30 V3.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C3 WSmd/SmtHSOP - 8ReelSi1 Channel20 V23 nC   
HP8KE5TB1


MOSFETs HSOP8 100V 8.5A N CHAN MOS
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ROHM 2400
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AUD 0.949
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8.5 A100 V193 mOhmsN - Channel 2.5 V- 55 C+ 150 C20 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V2.9 nCEnhancement  
RD3E08BBJHRBTL


MOSFETs TO252 P-CH 30V 80A
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ROHM 2400
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AUD 1.9045
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80 A30 V3.7 mOhmsP - Channel 2.5 V- 55 C+ 175 C142 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , 5 V150 nCEnhancementAEC - Q101 
DMTH10H010LPS-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 2399
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AUD 0.8725
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98.4 A100 V8.6 mOhmsN - Channel 1.4 V- 55 C+ 175 C125 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V53.7 nCEnhancement  
SH8K25GZ0TB


MOSFET 40V NCH+NCH POWER
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ROHM 2398
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AUD 0.4457
Multiples of: 1

5.2 A40 V85 mOhmsN - Channel 1 V- 55 C+ 150 C3 WSmd/SmtSOP - 8Cut TapeSi1 Channel12 V1.7 nCEnhancement  
AP2055K


20V 60A 4.8mΩ@4.5V,20A 3.13W N Channel TO-252-3 MOSFETs ROHS
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Quan Li 2352
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AUD 0.2521
Multiples of: 5

                   
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