MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA3056


MOSFET N Channel 30V 73A 2.2V @ 250uA 3.9mΩ @ 20A,10V PRPAK5*6 RoHS
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HUASHUO 2405
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AUD 0.2928
Multiples of: 5

                   
SH8J65TB1


MOSFET Pch+Pch -30V -7A MOSFET
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ROHM 2405
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AUD 1.1591
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7 A30 V31 mOhmsP - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
RD3G08CBLHRBTL


MOSFETs Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2405
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AUD 1.3693
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80 A40 V3.2 mOhmsN - Channel 4 V- 55 C+ 175 C96 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V42 nCEnhancement  
R6004JND3TL1


MOSFET 600V Vdss; 4A Id 60W Pd; TO-252
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ROHM 2405
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AUD 1.4167
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4 A600 V1.43 OhmsN - Channel 5 V- 55 C+ 150 C60 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V10.5 nCEnhancement  
PSMN2R8-80SSFJ


MOSFETs PSMN2R8-80SSF/SOT1235/LFPAK88
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Nexperia 2405
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AUD 2.5119
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205 A80 V2.8 mOhmsN - Channel 4 V- 55 C+ 175 C341 WSMD/SMTSOT - 1235 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V95 nCEnhancement  
TSM024NA04LCR RLG


MOSFET Power MOSFET, N-CHL, 40V, 170A, 2.4mOhm
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Taiwan Semiconductor 2404
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AUD 0.9915
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170 A40 V2.4 mOhmsN - Channel 1.2 V- 55 C+ 150 C125 WSmd/SmtPDFN - 56 - 8Cut TapeSi1 Channel20 V67 nCEnhancement  
PJL9407_R2_00001


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2403
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AUD 0.2479
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DMT6008LFG-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
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Diodes Incorporated 2403
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AUD 0.6124
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13 A60 V6.5 mOhmsN - Channel12 V2 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel12 V22.4 nCEnhancement Dmt6
OSG65R380DEF


TO-252-2 MOSFETs ROHS
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Oriental Semiconductor 2395
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AUD 0.7131
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NCE30P25S


MOSFET P Trench 30V 25A 2.5V @ 250uA 9 mΩ @ 15A,10V SOIC-8_150mil RoHS
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NCE Power 2375
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AUD 0.7131
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