MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3L08DBKHRBTL


MOSFETs TO252 N-CH 60V 80A
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ROHM 2403
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AUD 1.1263
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80 A60 V7.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V22 nCEnhancementAEC - Q101 
BUK6Y10-30PX


MOSFET BUK6Y10-30PX
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Nexperia 2402
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AUD 0.7355
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80 A30 V10 mOhmsP - Channel 3 V- 55 C+ 175 C110 WSMD/SMTLFPAK - 56 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42.5 nCEnhancementAEC - Q100 
IRFR9020PBF


P-Channel 50 V 9.9A (Tc) 42W (Tc) Surface Mount D-Pak
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Vishay 2402
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AUD 1.274
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9.9 A50 V280 mOhmsP - Channel 4 V- 55 C+ 150 C42 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 20 V , 20 V14 nCEnhancement  
RS7N160BHTB1


MOSFETs DFN5060 N-CH 80V 160A
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ROHM 2402
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AUD 2.906
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160 A80 V2.6 mOhmsN - Channel 4 V- 55 C+ 150 C160 WSMD/SMTDFN5060 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V73 nCEnhancement  
FDMS86163P


MOSFET PT5 100/25V Pch Power Trench MOSFET
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ON Semiconductor 2402
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AUD 3.406
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50 A100 V22 mOhmsP - Channel 2.8 V- 55 C+ 150 C104 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel25 V42 nCEnhancement Powertrench
RRQ045P03TR


MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -4.5A
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ROHM 2401
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AUD 0.5982
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4.5 A30 V25 mOhmsP - Channel    1.25 WSmd/SmtT SMT 6ReelSi1 Channel 14 nC   
WM02DN08T


Transistor: N-MOSFET x2; unipolar; SOT563
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Wayon 2400
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AUD 0.1066
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RFD14N05LSM(UMW)


TO-252 MOSFETs ROHS
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Youtai 2400
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AUD 0.139
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80N02


20V 80A 3.7mΩ 1.1V N Channel TO-252 MOSFETs ROHS
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HL 2400
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AUD 0.1699
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LWS6010H4


TO-252 MOSFETs ROHS
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Lewa Micro 2234
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AUD 0.5501
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