MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMHC4035LSD-13


Diodes Incorporated MOSFET 30V Comp H-Bridge ENH FET 20VGS
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Diodes Incorporated 15775
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AUD 0.6548
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- 2.9 A , 4 A- 40 v , 40 V58 mOhms , 100 mOhmsN - Channel, P - Channel - 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Reel-4 Channel+/- 20 V11.1 nC , 12.5 nCEnhancement  
ZVN4210A


N-Channel 100 V 450mA (Ta) 700mW (Ta) Through Hole TO-92
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Diodes Incorporated 3659
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AUD 0.5221
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450 mA100 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3 Si1 Channel10 V Enhancement  
JMTQ35N06A


60V 35A 41W 12m@10V,30A 1.6V@250uA 1PCSNChannel PDFN-8L(3.3x3.3) MOSFETs ROHS
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JieJie 3656
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AUD 0.1526
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DMN3009LFV-7


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 3654
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AUD 0.2776
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60 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
DMN15H310SK3-13


MOSFET 150V N-Ch Enh FET 310mOhm 10V 8.3A
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Diodes Incorporated 3651
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AUD 0.3929
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         Smd/SmtTO - 252 - 3Cut TapeSi      
BSC0704LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 3651
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AUD 0.4889
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BS107P


200V 120mA 30O@5V,100mA 500mW N Channel TO-92-3 MOSFETs ROHS
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Diodes Incorporated 3650
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AUD 0.399
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120 mA200 V30 Ohmsn - channel 1 V- 55 C+ 150 C500 mWthrough holeTO - 92 - 3Bulksi1 channel5 V enhancement  
SP40N12P8


SOP-8L MOSFETs ROHS
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Siliup 3647
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AUD 0.0711
Multiples of: 10

                   
IPG20N06S2L-50


Infineon Technologies MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
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Infineon 3647
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AUD 0.8904
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20 A55 V50 mOhmsN - Channel   + 175 C51 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
SI3420A-TP


MOSFET N-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) 2817
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AUD 0.1449
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