MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMTS001N06CLTXG


MOSFET T6 60V LL PQFN8*8 EXPANSION
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ON Semiconductor 36
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AUD 9.2099
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IXTQ480P2


MOSFET PolarP2 Power MOSFET
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IXYS 29
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AUD 9.217
Multiples of: 1

52 A500 V120 mOhmsn - channel  - 55 C+ 150 C960 Wthrough holeTO - 3P - 3Tubesi1 channel30 V   polar2 hiperfet
PSMN2R5-60PLQ


MOSFET N-Channel MOSFET
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Nexperia 3
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AUD 9.2504
Multiples of: 1

150 A60 V5.6 mOhmsN - Channel 2.45 V  349 WThrough HoleTO - 220 - 3TubeSi1 Channel 223 nC   
IXFQ30N60X


MOSFET DiscMSFT NCh UltrJnctn XClass TO-3P (3)
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IXYS 0
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AUD 9.2032
Multiples of: 1

30 A600 V155 mOhmsN - Channel 2.5 V- 55 C+ 150 C500 WThrough HoleTO - 3P - 3 Si1 Channel30 V56 nCEnhancement Hiperfet
ALD1103SBL


MOSFET Dual P&N-Ch. Pair
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Advanced Linear Devices 0
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AUD 9.2086
Multiples of: 50

40 mA , 16 mA12 V50 Ohms , 180 OhmsN And P - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Smd/SmtSOIC - 14TubeSi4 Channel10.6 V Enhancement  
NTMTS1D2N08H


MOSFET T8-80V IN PQFN88 FOR INDUSTRIAL MARKET
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ON Semiconductor 0
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AUD 9.2115
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IRFP244PBF


MOSFET N Trench 250V 15A 4V @ 250uA 280 mΩ @ 9A,10V TO-247 (AC) RoHS
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Infineon 0
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AUD 9.2124
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NTE2949


Transistor: N-MOSFET; 650V; 20.7A; TO220F
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NTE 0
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AUD 9.2229
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IXFH30N60X


MOSFET DiscMSFT NCh UltrJnctn XClass TO-247AD
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IXYS 0
6 to 16 Weeks Calender.png

AUD 9.2358
Multiples of: 1

30 A600 V155 mOhmsN - Channel 2.5 V- 55 C+ 150 C500 WThrough HoleTO - 247 - 3 Si1 Channel30 V56 nCEnhancement Hiperfet
FMW20N60S1HF


MOSFET, N-CH, 600V, 20A, TO-247-3
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Fuji 0
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AUD 9.24
Multiples of: 1

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