MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCMT080N65S3


MOSFET 650V 38A, 80MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 11
Ships to you
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AUD 9.1621
Multiples of: 1

                   
NTHL080N120SC1


MOSFET SIC MOS 80MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 9.1038
Multiples of: 1

44 A1200 V110 mOhmsN - Channel 1.8 V- 55 C+ 150 C348 WThrough HoleTO - 247 - 3TubeSi1 Channel- 15 v , 25 V56 nCEnhancement  
SIHH070N60EF-T1GE3


MOSFET 600V PowerPAK 8x8 N-CHANNEL
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Vishay 0
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AUD 9.1125
Multiples of: 1

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TPW60R040MFD


600V 72A 35mO@10V,36A 500W N Channel TO-247-3 MOSFETs ROHS
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UNIGROUP 0
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AUD 9.1157
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IRFF210


Trans MOSFET N-CH 200V 2.25A 3-Pin TO-39
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Infineon 0
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AUD 9.1219
Multiples of: 10

                   
NTE2383


Transistor: P-MOSFET; 100V; 8A; TO220
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NTE 0
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AUD 9.1418
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APT7F120B


N-Channel 1200 V 7A (Tc) 335W (Tc) Through Hole TO-247 [B]
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Microchip 0
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AUD 9.1429
Multiples of: 1

7 A1200 V1.57 OhmsN - Channel 4 V- 55 C+ 150 C335 WThrough HoleTO - 247 - 3ReelSi 30 V80 nCEnhancement Power Mos 8
IPI60R099CPA


MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CPA
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Infineon 0
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AUD 9.1429
Multiples of: 1

31 A600 V199 mOhmsN - Channel  - 40 C+ 150 C255 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V Enhancement Coolmos
IXTT52N30P


MOSFET 52 Amps 300V 0.066 Rds
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IXYS 0
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AUD 9.1522
Multiples of: 1

52 A300 V66 mOhmsN - Channel  - 55 C+ 150 C400 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V Enhancement  
IXTT96N15P


MOSFET 96 Amps 150V 0.024 Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 9.1522
Multiples of: 1

96 A150 V24 mOhmsN - Channel  - 55 C+ 175 C480 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V Enhancement  
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