MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF840


Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 9.1662

Multiples of: 1

                enhancement  
IPD80R280P7


Infineon LOW POWER_NEW
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Infineon 0
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AUD 9.1718

Multiples of: 1

                   
FCH47N60NF


MOSFET 600V N-Chan MOSFET FRFET, SupreMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 9.1793

Multiples of: 1

45.8 A600 V57.5 mOhmsn - channel   + 150 C368 Wthrough holeTO - 247 - 3Tubesi1 channel    supremos frfet
IXFH12N50F


MOSFET IXFH12N50F 500V 12A HIPERFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 9.18

Multiples of: 1

12 A500 V400 mOhmsn - channel  - 55 C+ 150 C180 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement  
IPI200N25N3GAKSA1


Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 9.1848

Multiples of: 73

            Optimos 3      
SIHG44N65EF-GE3


MOSFET 650V Vds 30V Vgs TO-247AC
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Vishay 0
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AUD 9.1884

Multiples of: 1

46 A650 V63 mOhmsN - Channel 4 V- 55 C+ 150 C417 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V185 nCEnhancement  
IMZ120R060M1HXKSA1


MOSFET SIC DISCRETE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 9.1884

Multiples of: 1

36 A1200 V78 mOhmsN - Channel 5.7 V- 55 C+ 150 C150 WThrough HoleTO - 247 - 4TubeSic1 Channel- 7 v , 23 V31 nCEnhancement  
NTMTSC1D5N08MC


MOSFET PTNG 80V IN CEBU PQFN88
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ON Semiconductor 0
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AUD 9.1923

Multiples of: 1

                   
SIHG47N60S-E3


MOSFET N-CHANNEL 600V
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Vishay 0
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AUD 9.1928

Multiples of: 1

47 A600 V57 mOhmsn - channel20 V4 V- 55 C+ 150 C417 Wthrough holeTO - 247 - 3Tube   216 nC   
ALD1102ASAL


MOSFET Dual P-Channel Pair
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Advanced Linear Devices 0
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AUD 9.1929

Multiples of: 50

16 mA12 V180 Ohmsp - channel 400 mV0 C+ 70 C500 mWsmd/smtSOIC - 8Tubesi2 channel- 10.6 V enhancement  
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