MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA90R1K0C3


MOSFET N-Ch 900V 5.7A TO220FP-3 CoolMOS C3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 4
Ships to you
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AUD 8.5106
Multiples of: 1

5.7 A900 V1 Ohmsn - channel  - 55 C+ 150 C32 Wthrough holeTO - 220FPTubesi1 channel20 V34 nCenhancement coolmos
IXFT50N60P3 TRL


MOSFET IXFT50N60P3 TRL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 8.5027
Multiples of: 400

           -       
ALD114804APCL


MOSFET Quad EPAD(R) N-Ch
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Advanced Linear Devices 0
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AUD 8.5075
Multiples of: 50

12 mA10 V500 Ohmsn - channel  0 C+ 70 C500 mW (1/2 w)through holePDIP - 16Tubesi4 channel10.6 V depletion  
IXTA6N50D2-TRL


MOSFET IXTA6N50D2 TRL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 8.5151
Multiples of: 1

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STI35N65M5


MOSFET Nchannel 650 V 0.085 Ohm, 27 A, MDmesh
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STMicroelectronics 0
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AUD 8.5174
Multiples of: 1

27 A650 V98 mOhmsn - channel  - 55 C+ 150 C160 Wthrough holeI2PAK - 3Tube 1 channel25 V83 nCenhancement  
STF13N95K3


MOSFET N-Ch 950V 0.68 Ohm 10A SuperMESH3
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STMicroelectronics 0
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AUD 8.5479
Multiples of: 1

10 A950 V850 mOhmsn - channel  - 55 C+ 150 C40 Wthrough holeTO - 220 - 3 FPTubesi1 channel30 V51 nCenhancement supermesh
AONS66916


DFN-8(5x6) MOSFETs ROHS
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Alpha & Omega 0
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AUD 8.555
Multiples of: 1

                   
TK065Z65Z,S1F


MOSFET PWR MOSFET TRANSISTR PD=270W F=1MHz
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Toshiba 0
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AUD 8.5644
Multiples of: 1

38 A650 V65 mOhmsN - Channel 4 V- 55 C+ 150 C270 WThrough HoleTO - 247 - 4L - 4TubeSi1 Channel- 30 V , + 30 V62 nCEnhancement  
IPB107N20NA


MOSFET N-CH 200V 88A TO263-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 8.5773
Multiples of: 1

88 A200 V9.6 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3-Si1 Channel20 V87 nCEnhancement Optimos
IXFA36N60X3


MOSFET DISCRETE MOSFET 36A 600V X3 TO
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IXYS 0
6 to 16 Weeks Calender.png

AUD 8.6154
Multiples of: 1

            HiPerFET, X3 - Class      
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