MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ALF08NP16V5


MOSFET,AUDIO, NP CH,160V,8A,TO-247
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TT Electronics 0
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AUD 8.304

Multiples of: 1

   n and p channel               
STU16N65M5


MOSFET N-CH 65V 12A MDMESH
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STMicroelectronics 0
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AUD 8.3077

Multiples of: 1

12 A650 V299 mOhmsn - channel  - 55 C+ 150 C90 Wthrough holeIPAK - 3Tube 1 channel25 V enhancement  
SIHH100N65E-T1-GE3


MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V
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Vishay 0
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AUD 8.3154

Multiples of: 1

28 A650 V100 mOhmsN - Channel 5 V- 55 C+ 150 C184 WSMD/SMTPOWERPAK - 8X8Reel , Cut TapeSi1 Channel- 30 V , + 30 V41 nCEnhancement  
PSMN2R3-100SSEJ


MOSFETs MOS DISCRETES
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Nexperia 0
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AUD 8.3327

Multiples of: 1

255 A100 V2.28 mOhmsN - Channel 3.6 V- 55 C+ 175 C341 WSMD/SMTSOT - 1235 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V161 nCEnhancement  
IXFA30N25X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2
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IXYS 0
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AUD 8.3354

Multiples of: 1

           Tube      Hiperfet
BUK9E3R2-40B,127


Trans MOSFET N-CH 40V 222A Automotive 3-Pin(3+Tab) I2PAK Rail
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NXP 0
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AUD 8.3532

Multiples of: 1

                   
ALD114904APAL


MOSFET Dual EPAD(R) N-Ch
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Advanced Linear Devices 0
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AUD 8.36

Multiples of: 1

12 mA10 V500 Ohms , 500 OhmsN - Channel 420 mV0 C+ 70 C500 mWThrough HolePDIP - 8TubeSi2 Channel10.6 V Depletion  
TK065N65Z,S1F


MOSFET 270W 1MHz TO-247
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Toshiba 0
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AUD 8.3671

Multiples of: 1

30 A650 V65 mOhmsN - Channel 4 V- 55 C+ 150 C270 WThrough HoleTO - 247 - 3DTMOSVI , Cut Tape , ReelSi1 Channel- 30 V , + 30 V62 nCEnhancement DTMOSVI
F20W60C3-7100


MOSFET Hi Switching Speed High Voltage
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Shindengen 0
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AUD 8.3671

Multiples of: 1

20 A600 V0.19 Ohmsn - channel30 V - 55 C+ 150 C75 Wthrough holeM TO - 3P - 3Tubesi 30 V87 nC   
NTE67


Transistor: N-MOSFET; 400V; 5.5A; TO220
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NTE 0
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AUD 8.37

Multiples of: 1

                   
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