MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS5C410NWFAFT3G


40V 0.92m@50A,10V 3.5V@250uA 1PCSNChannel DFN-5(5x6) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 56
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AUD 8.2398
Multiples of: 1

                   
DMG6968U


30V 6.5A 30mO@10V,6.5A N Channel SOT-23-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 1
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AUD 8.2998
Multiples of: 1

                   
NVBLS0D5N04CTXG


N-Channel 40V 65A (Ta), 300A (Tc) 4.3W (Ta), 198.4W (Tc) Surface Mount 8-HPSOF
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ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 7.8729
Multiples of: 1

300 A40 V570 uOhmsN - Channel 4 V- 55 C+ 175 C198.4 WSMD/SMTTO - LL8 - 8 Si1 Channel- 20 V , + 20 V185 nCEnhancement  
IXTH88N15


MOSFET 88 Amps 150V 0.022 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 8.2328
Multiples of: 1

88 A150 V22 mOhmsP - Channel  - 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
STW62N65M5


Transistor: N-MOSFET; unipolar; 650V; 26A; 330W; TO247
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STMicroelectronics 0
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AUD 8.24
Multiples of: 30

            mdmesh      
NTE2946


Transistor: N-MOSFET; 500V; 4.6A; TO220F
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NTE 0
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AUD 8.25
Multiples of: 1

                   
SIHG47N60AEL-GE3


MOSFET 600V Vds 30V Vgs TO-247AC
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Vishay 0
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AUD 8.25
Multiples of: 500

47 A600 V65 mOhmsN - Channel 2 V- 55 C+ 150 C379 WThrough HoleTO - 247AC - 3 Si1 Channel10 V111 nCEnhancement  
IXFP50N20X3


Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
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IXYS 0
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AUD 8.2537
Multiples of: 1

            HiPerFET, X3 - Class      
R6030ENZ4C13


MOSFET NCH 600V 30A POWER MOSFET
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ROHM 0
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AUD 8.2657
Multiples of: 1

30 A600 V130 mOhmsN - Channel 2 V- 55 C+ 150 C305 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V85 nCEnhancement  
ALD1101BPAL


Advanced Linear Devices MOSFET Dual N-Channel Pair
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Advanced Linear Devices 0
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AUD 8.2836
Multiples of: 50

40 mA12 V75 Ohmsn - channel 400 mV0 C+ 70 C500 mWthrough holePDIP - 8Tubesi2 channel13.2 V enhancement  
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