MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMTS1D6N10MCTXG


MOSFET PTNG 100V SINGLE NCH PQFN8X8 STD CLIP 1.6 MOHMS MAX
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 8.0769
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IPP60R074C6


Infineon Technologies MOSFET N-Ch 650V 57.7A TO220-3
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Infineon 0
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AUD 8.0877
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57.7 A600 V67 mOhmsn - channel 2.5 V- 55 C+ 150 C480.8 Wthrough holeTO - 220 - 3Tubesi1 channel20 V138 nCenhancement coolmos
GS-065-030-2-L-MR


MOSFET 650V, 30A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
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Gan Systems 0
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AUD 8.0929
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30 A650 V50 mOhmsN - Channel 1.7 V- 55 C+ 150 C-SMD/SMTPDFN - 9Reel , Cut TapeGaN - on - Si1 Channel- 10 V , + 7 V6.7 nCEnhancement  
FQA11N90C-F109


MOSFET N Trench 900V 11A 5V @ 250uA 1.1 Ω @ 5.5A,10V TO-3P RoHS
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ON Semiconductor 0
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AUD 8.0944
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11 A900 V1.4 OhmsN - Channel  - 55 C+ 150 C300 WThrough HoleTO - 3PN - 3 Si1 Channel30 V Enhancement Qfet
NVMFS2D3P04M8LT1G


MOSFET MV8 P INITIAL PROGRAM
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ON Semiconductor 0
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AUD 8.1033
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222 A40 V2.2 mOhmsP - Channel 2.4 V- 55 C+ 175 C3.8 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V157 nCEnhancement  
IXFH12N80P


MOSFET DIODE Id12 BVdass800
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IXYS 0
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AUD 8.1075
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12 A800 V850 mOhmsn - channel  - 55 C+ 150 C360 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hiperfet
TK31J60W5,S1VQ


Toshiba MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
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Toshiba 0
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AUD 8.1086
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30.8 A600 V73 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C230 Wthrough holeTO - 3P - 3Reelsi1 channel30 V86 nCenhancement dtmosiv
NTMYS2D2N06CLTWG


MOSFET TRENCH 6 40V SL NFET
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ON Semiconductor 0
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AUD 8.1154
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ALD310700SCL


MOSFET Quad P-Channel EPAD Matched Pair
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Advanced Linear Devices 0
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AUD 8.1231
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2.07 mA8 V1 kOhmsP - Channel 20 mV0 C+ 70 C500 mWSmd/SmtSOIC - 16 Si4 Channel- 8 V-Enhancement  
IPZ65R065C7


Infineon Technologies MOSFET
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Infineon 0
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AUD 8.1243
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33 A650 V58 mOhmsN - Channel 3 V- 55 C+ 150 C171 WThrough HoleTO - 247 - 4TubeSi1 Channel20 V64 nCEnhancement Coolmos C7
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