MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUS300N08S5N012


MOSFET MOSFET_(75V 120V(
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Infineon 49
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AUD 4.1154
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IXTT20P50P


MOSFET -20.0 Amps -500V 0.450 Rds
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IXYS 24
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AUD 18.2057
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20 A500 V450 mOhmsp - channel 2 V- 55 C+ 150 C460 Wsmd/smtTO - 268 - 3Tubesi1 channel10 V103 nCenhancement polarp
STFI13N95K3


N-Channel 950 V 10A (Tc) 40W (Tc) Through Hole I2PAKFP (TO-281)
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STMicroelectronics 0
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AUD 8.0496
Multiples of: 1

10 A950 V680 mOhmsn - channel 4 V- 55 C+ 150 C40 Wthrough holeI2PAKFP - 3Tube 1 channel30 V51 nCenhancement  
IXTH2R4N120P


MOSFET 2.4 Amps 1200V
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IXYS 0
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AUD 8.0548
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2.4 A1.2 kV7.5 OhmsN - Channel  - 55 C+ 150 C125 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
NTE2378


Transistor: N-MOSFET; 900V; 5A; TO3P
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NTE 0
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AUD 8.0571
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IPI200N25N3 G


MOSFET N-Channel 250V MOSFET
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Infineon 0
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AUD 8.0607
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64 A250 V20 mOhmsN - Channel  - 55 C+ 175 C300 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V64 nC  Optimos
IXTH3N100P


MOSFET 3 Amps 1000V
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IXYS 0
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AUD 8.0657
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3 A1 kV4.8 OhmsN - Channel  - 55 C+ 150 C125 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
NCE65TF041T


TO-247 MOSFETs ROHS
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NCE Power 0
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AUD 8.0685
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IXFT26N60P


MOSFET 600V 26A
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IXYS 0
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AUD 8.0743
Multiples of: 1

26 A600 V270 mOhmsN - Channel  - 55 C+ 150 C460 WSmd/SmtTO - 268 - 3TubeSi1 Channel30 V Enhancement Hiperfet
NTE6410


Transistor: UJT; unipolar; 300mW; TO92
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NTE 0
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AUD 8.0754
Multiples of: 1

                   
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