MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS86255ET150


Fairchild Semiconductor MOSFET
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ON Semiconductor 1
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AUD 10.9441
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45 A150 V9.5 mOhmsN - Channel 2 V- 55 C+ 150 C113 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V45 nCEnhancement Powertrench Power Clip
NTHL065N65S3F


MOSFET SUPERFET3 650V TO247
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ON Semiconductor 0
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AUD 5.5337
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46 A650 V65 mOhmsN - Channel 3 V- 55 C+ 150 C337 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V98 nCEnhancement  
NTE2902


Transistor: N-JFET; 25V; 0.06A; TO92
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NTE 0
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AUD 5.541
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BUK7507-55B,127


Trans MOSFET N-CH 55V 119A Automotive 3-Pin(3+Tab) TO-220AB Rail
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NXP 0
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AUD 5.5422
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STW23N80K5


MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSFET in a TO-247 package
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STMicroelectronics 0
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AUD 5.5437
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16 A800 V280 mOhmsn - channel 4 V- 55 C+ 150 C190 Wthrough holeTO - 247 - 3 si1 channel+/- 30 V33 nCenhancement mdmesh
SIHA17N80E-GE3


MOSFET N-CHANNEL 800V
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Vishay 0
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AUD 5.55
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   N Channel               
IXTQ30N60P


MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
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IXYS 0
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AUD 5.5527
Multiples of: 30

30 A600 V240 mOhmsN - Channel  - 55 C+ 150 C540 WThrough HoleTO - 3P - 3TubeSi1 Channel30 V Enhancement  
IPI65R110CFD


Infineon Technologies MOSFET N-Ch 700V 31.2A I2PAK-3 CoolMOS CFD2
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Infineon 0
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AUD 5.555
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31.2 A700 V110 mOhmsn - channel  - 55 C+ 150 C277.8 Wthrough holeI2PAK - 3Tubesi1 channel20 V118 nC  coolmos
IRFPC50PBF


MOSFET N Trench 600V 11A 4V @ 250uA 600 mΩ @ 6A,10V TO-247 (AC) RoHS
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Infineon 0
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AUD 5.5554
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STL45N60DM6


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 5.5555
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25 A600 V110 mOhmsN - Channel 3.25 V- 55 C+ 150 C160 WSmd/SmtPowerflat8x8 - 5  1 Channel25 V44 nCEnhancement  
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