MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK7509-55A,127


Trans MOSFET N-CH 55V 108A Automotive 3-Pin(3+Tab) TO-220AB Rail
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NXP 0
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AUD 5.4892
Multiples of: 1

                   
SIHH27N60EF-T1-GE3


MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
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Vishay 0
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AUD 5.4972
Multiples of: 1

29 A600 V87 mOhmsN - Channel 2 V- 55 C+ 150 C202 WSmd/SmtPOWERPAK - 8X8 - 4Cut TapeSi1 Channel30 V135 nCEnhancement  
SIHF35N60E-GE3


MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 5.4976
Multiples of: 1

32 A600 V0.082 Ohmsn - channel 4 V- 55 C+ 150 C39 Wthrough holeTO - 220FP - 3Tubesi1 channel30 V88 nCenhancement  
MCBS260N10YHE3-TP


MOSFETs N-CHANNEL MOSFET,TO-263-7
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Micro Commercial Components (MCC) 0
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AUD 5.5
Multiples of: 1

260 A100 V1.8 mOhmsN - Channel 4 V- 55 C+ 150 C375 WSMD/SMTTO - 263 - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V161 nCEnhancement  
SIHF30N60E-GE3


MOSFET 600V 125mOhms10V 29A N-Ch E-SRS
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Vishay 0
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AUD 5.5
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29 A600 V125 mOhmsN - Channel20 V2 v to 4 V- 55 C+ 150 C37 WThrough HoleTO - 220 - 3BulkSi1 Channel30 V130 nCEnhancement E Series
IXTA60N20T


MOSFET 60 Amps 200V
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IXYS 0
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AUD 5.5
Multiples of: 300

60 A200 V40 mOhmsn - channel     smd/smtTO - 263 - 3Tubesi1 channel    hiperfet
NTHL099N60S5


MOSFET SUPERFET5 EASY 99MOHM TO-247-3
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ON Semiconductor 0
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AUD 5.8614
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33 A600 V99 mOhmsN - Channel 4 V- 55 C+ 150 C184 WThrough HoleTO - 247 - 3 Si1 Channel- 30 V , + 30 V48 nCEnhancement  
AOK2500L


N-Channel 150 V 14A (Ta), 180A (Tc) 3.1W (Ta), 500W (Tc) Through Hole TO-247
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Alpha & Omega 0
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AUD 5.502
Multiples of: 1

       - 55 C ~ 175 C (tj)  TO - 247 - 3Tube       
TK31N60W5-VB


600V 31A 90m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 0
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AUD 5.5073
Multiples of: 1

                   
IXTP20N65X2


Discrete Semiconductor Modules DiscMSFT NChUltraJnctX2Class TO-220AB/FP
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IXYS 0
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AUD 5.5138
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20 A650 V185 mOhmsN - Channel 2.5 V- 55 C+ 150 C290 WThrough HoleTO - 220 - 3Tube  30 V   Hiperfet
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