MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN4R8-100BSE


MOSFET, N-CH, 100V, 120A, D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 5.5146

Multiples of: 1

   N Channel               
SUM75N15-18P-E3


MOSFET RECOMMENDED ALT 781-SUM85N15-19-E3
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Vishay 0
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AUD 5.5151

Multiples of: 1

           -       
APT6M100K


Trans MOSFET N-CH 1KV 6A 3-Pin(3+Tab) TO-220
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Microchip 0
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AUD 5.5157

Multiples of: 1

6 A1000 V2.05 Ohmsn - channel 4 V- 55 C+ 150 C225 Wthrough holeTO - 220 - 3Reel  30 V43 nCenhancement power mos 8
IPB065N15N3GXT


Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 5.5166

Multiples of: 1000

                   
SIHW33N60E-GE3


MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
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Vishay 0
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AUD 5.52

Multiples of: 1

33 A600 V99 mOhmsN - Channel 4 V- 55 C+ 150 C278 WThrough HoleTO - 247ADTubeSi1 Channel30 V100 nCEnhancement E - Series
SIHG30N60AEL-GE3


MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3
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Vishay 0
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AUD 5.52

Multiples of: 500

28 A600 V120 mOhmsN - Channel 2 V- 55 C+ 150 C250 WThrough HoleTO - 247AC - 3 Si1 Channel30 V120 nCEnhancement  
IRFS4115-7PPBF


Transistor: N-MOSFET; unipolar; 150V; 105A; 380W; D2PAK-7
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Infineon 0
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AUD 5.52

Multiples of: 1

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IXTP140N12T2


Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP
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IXYS 0
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AUD 5.5205

Multiples of: 1

140 A120 V10 mOhmsN - Channel 2.5 V- 55 C+ 175 C577 WThrough HoleTO - 220AB - 3Tube  20 V   Trencht2
FDBL86361_F085


Fairchild Semiconductor MOSFET
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ON Semiconductor 0
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AUD 5.5217

Multiples of: 1

300 A80 V3.1 mOhmsn - channel20 V2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V172 nCenhancement powertrench
IRFS31N20DHR


Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK
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Infineon 0
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AUD 5.5224

Multiples of: 1

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