MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPCA8123,L1Q


MOSFET P Trench 60V 50A 3V @ 1mA 14.9 mΩ @ 25A,6V SOP Advance RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 2467
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AUD 4.6966
Multiples of: 1

                   
SUD40N08-16


SUD40N08-16 SEMIS NON STOCKED
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Vishay 0
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AUD 4.6849
Multiples of: 1

40 A80 V16 mOhmsn - channel  - 55 C+ 175 C3 Wsmd/smtDPAK - 3Reel  20 V enhancement trenchfet
STB22N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 4.6849
Multiples of: 1

15 A60 V230 mOhmsN - Channel 3.25 V- 55 C+ 150 C130 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel25 V20 nCEnhancement Mdmesh
SIHB17N80E-T1-GE3


MOSFET E Series Power
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Vishay 0
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AUD 4.6849
Multiples of: 1

15 A800 V290 mOhmsN - Channel 2 V- 55 C+ 150 C208 WSMD/SMT Cut Tape , Reel , ReelSi1 Channel- 30 V , + 30 V122 nCEnhancement  
SiHP16N50C-E3


MOSFET N-Channel 500V
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Vishay 0
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AUD 4.6885
Multiples of: 1

16 A500 V380 mOhmsn - channel 5 V- 55 C+ 150 C250 Wthrough holeTO - 220 - 3Tubesi1 channel30 V45 nCenhancement  
WMLL065N15HG2


Transistor: N-MOSFET; unipolar; TOLL
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Wayon 0
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AUD 4.6889
Multiples of: 1

                   
IPB180N04S4LH0ATMA1


MOSFET N-CHANNEL 30/40V
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Infineon 0
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AUD 4.6918
Multiples of: 1000

   N - Channel     Smd/SmtTO - 263 - 7Cut TapeSi1 Channel   Aec - Q101 
IPDD60R075CFD7XTMA1


N-Channel 600V 40A (Tc) 266W (Tc) Surface Mount PG-HDSOP-10-1
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Infineon 0
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AUD 4.4943
Multiples of: 1700

40 A650 V75 mOhmsN - Channel 4.5 V- 55 C+ 150 C266 WSMD/SMTHDSOP - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V51 nCEnhancement  
AUIRFS3607TRL


International Rectifier MOSFET 75V 80A 9 mOhm Automotive MOSFET
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Infineon 0
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AUD 4.6971
Multiples of: 1

80 A75 V7.34 mOhmsn - channel   + 175 C140 Wsmd/smtD - PAK - 3Reelsi  56 nC aec - q101 
SIHA24N65EF-E3


MOSFET N-Ch 700V Vds w/ Fast Body Diode
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Vishay 0
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AUD 4.6971
Multiples of: 1

24 A700 V0.156 Ohmsn - channel 4 V- 55 C+ 150 C39 Wthrough holeTO - 220FP - 3Tubesi1 channel30 V81 nCenhancement  
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