MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPW60R120C7


MOSFETs HIGH POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 581
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AUD 4.6632
Multiples of: 1

                   
STP35N65DM2


MOSFET N-channel 650 V, 0.093 Ohm typ 32 A MDmesh DM2 Power MOSFET
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STMicroelectronics 0
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AUD 4.6518
Multiples of: 1

            Si      
SIHG22N60EF-GE3


MOSFET Nch 600V Vds 30V Vgs TO-247AC; wdiode
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Vishay 0
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AUD 4.6532
Multiples of: 1

           Tube       
SIHG21N60EF-GE3


Vishay Semiconductors MOSFET N-Channel 600V EF Series
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Vishay 0
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AUD 4.6538
Multiples of: 500

21 A600 V176 mOhmsn - channel 2 V- 55 C+ 150 C227 Wthrough holeTO - 247AC - 3Reelsi1 channel+/- 30 V56 nCenhancement ef series
PSMN1R9-40PLQ


NXP Semiconductors MOSFET N-channel 40 V 1.7 mOhm MOSFET
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Nexperia 0
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AUD 4.654
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150 A40 V1.4 mOhmsN - Channel 1.7 V- 55 C+ 175 C349 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V230 nC   
FCB11N60


MOSFET SF1 600V 380MOHM E D2PAK
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ON Semiconductor 0
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AUD 4.6547
Multiples of: 1

   N Channel               
FQA11N90_F109


Fairchild Semiconductor MOSFET 900V N-Channel QFET
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ON Semiconductor 0
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AUD 4.6631
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11.4 A900 V960 mOhmsn - channel30 V - 55 C+ 150 C300 Wthrough holeTO - 3P - 3Tubesi1 channel30 V enhancement qfet
TSM8N80CZ C0G


Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
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Taiwan Semiconductor 0
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AUD 4.6652
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R6024ENZC8


MOSFET 10V Drive Nch MOSFET
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ROHM 0
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AUD 4.6659
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24 A600 V150 mOhmsn - channel 2 V- 55 C+ 150 C120 Wthrough holeTO - 3PF - 3Bulksi1 channel+/- 20 V70 nCenhancement  
IXFA76N15T2


MOSFET
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IXYS 0
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AUD 4.6667
Multiples of: 1

         Smd/SmtTO - 263 - 3TubeSi     Hiperfet
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