MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS6H800NT1G


MOSFET TRENCH 8 80V NFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 18
Ships to you
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AUD 9.8697
Multiples of: 1

203 A80 V2.1 mOhmsN - Channel 2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V85 nCEnhancement  
STF34N65M5


MOSFET N-Ch 650V 0.098 Ohm 29A MDMesh V MOS
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STMicroelectronics 0
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AUD 4.6356
Multiples of: 1

29 A 110 mOhmsn - channel    30 Wthrough holeTO - 220 - 3 FPTubesi1 channel    mdmesh
IPW60R125CP


N-Channel 600 V 25A (Tc) 208W (Tc) Through Hole PG-TO247-3-21
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Infineon 0
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AUD 4.6357
Multiples of: 1

25 A600 V110 mOhmsN - Channel 2.5 V- 55 C+ 150 C208 WThrough HoleTO - 247TubeSi1 Channel20 V70 nCEnhancement Coolmos
IRFS4321-7PPBF


MOSFET Trench Mosfet - D2Pak-7P
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Infineon 0
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AUD 4.6373
Multiples of: 50

           Tube       
SIHB125N60EF-GE3


MOSFET 600V N-CHANNEL
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Vishay 0
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AUD 4.641
Multiples of: 1

25 A600 V125 mOhmsN - Channel 5 V- 55 C+ 150 C179 WSMD/SMT  Si1 Channel- 30 V , 30 V31 nCEnhancement  
STB270N4F3


STMicroelectronics MOSFET N-Channel 40V Pwr Mosfet
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STMicroelectronics 0
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AUD 4.6413
Multiples of: 1000

160 A40 V2 mOhmsn - channel20 V - 55 C+ 175 C330 Wsmd/smtD2PAK - 3Reelsi1 channel20 V enhancementaec - q101stripfet
IXTP130N10T


MOSFET MOSFET Id130 BVdass100
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IXYS 0
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AUD 4.6444
Multiples of: 1

130 A100 V8.5 mOhmsN - Channel  - 55 C+ 175 C360 WThrough HoleTO - 220 - 3TubeSi1 Channel  Enhancement Hiperfet
STF33N60DM6


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 4.6449
Multiples of: 1

                   
IPB108N15N3GXT


Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.6456
Multiples of: 1000

                   
IRF1405ZSTRL7PP


N-Channel 55 V 120A (Tc) 230W (Tc) Surface Mount D2PAK
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.6485
Multiples of: 800

150 A55 V4.8 mOhmsn - channel 4 V + 175 C230 Wsmd/smtTO - 252 - 3Reelsi1 channel 180 nC   
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