MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTH24N65X2


Discrete Semiconductor Modules DiscMSFT NChUltraJnctn X2Class TO-247AD
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IXYS 32
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AUD 4.6199
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24 A650 V145 mOhmsN - Channel 3 V- 55 C+ 150 C390 WThrough HoleTO - 247 - 3Tube  30 V   Hiperfet
PSMN1R7-40YLDX


MOSFET PSMN1R7-40YLD/SOT669/LFPAK
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Nexperia 9
Ships to you
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AUD 4.6309
Multiples of: 1

                   
NTP5404NRG


MOSFET NFET TO220 40V 136A 3.5mOhm
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ON Semiconductor 0
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AUD 4.6154
Multiples of: 1

                   
TK31V60W,LVQ


MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A
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Toshiba 0
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AUD 4.62
Multiples of: 2500

30.8 A600 V78 mOhmsN - Channel30 V2.7 v to 3.7 V- 55 C+ 150 C240 WSmd/SmtDFN - 5 8X8Reel 1 Channel30 V86 nCEnhancement Dtmosiv
IRFZ24N


Trans MOSFET N-CH 55V 17A 3-Pin(3+Tab) TO-220AB
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Infineon 0
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AUD 4.6232
Multiples of: 1

                   
ALD110800SCL


MOSFET Quad EPAD(R) N-Ch
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Advanced Linear Devices 0
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AUD 4.6269
Multiples of: 1

12 mA10 V500 Ohmsn - channel 20 mV0 C+ 70 C500 mW (1/2 w)smd/smtSOIC - 16Tubesi4 channel10.6 V depletion  
IXTH10P50P


MOSFET -10.0 Amps -500V 1.000 Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 4.63
Multiples of: 30

10 A500 V1 OhmsP - Channel 4 V- 55 C+ 150 C300 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V50 nCEnhancement  
IXFP12N65X2M


MOSFET 650V/12A OVERMOLDED TO-220
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IXYS 0
6 to 16 Weeks Calender.png

AUD 4.6308
Multiples of: 1

12 A650 V310 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V18.5 nCEnhancement Hiperfet
IXTP12N65X2M


MOSFET MSFT N-CH ULTRA JNCT X2 3&44
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IXYS 0
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AUD 4.6308
Multiples of: 1

                   
TK20E60U


MOSFET, N CH, 600V, 20A, TO220
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Toshiba 0
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AUD 4.6331
Multiples of: 1

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