MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHG105N60EF-GE3


MOSFET EF Series Pwr MOSFET wFast Body Diode
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Vishay 0
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AUD 3.6952

Multiples of: 1

29 A600 V102 mOhmsN - Channel 5 V- 55 C+ 150 C208 WThrough Hole Cut Tape , Reel , ReelSi1 Channel- 30 V , + 30 V35 nCEnhancement  
IRF6797MTR1PBF


MOSFET 25V SINGLE N-CH 20V VGS MAX
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Infineon 0
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AUD 3.6957

Multiples of: 1

210 A25 V2.4 mOhmsn - channel 1.35 v to 2.35 V- 40 C+ 150 C89 Wsmd/smtDirectfet - MXReelsi1 channel20 V45 nCenhancement  
IRF6618TR1PBF


Transistor: N-MOSFET; unipolar; 30V; 29A; 89W; DirectFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 3.6957

Multiples of: 1

29 A30 V3.4 mOhmsN - Channel20 V   89 WSmd/SmtDirectfet - 4Reel   46 nC   
IRFI4020H-117PXKMA1


MOSFETs TRENCH >=100V
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Infineon 0
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AUD 3.6972

Multiples of: 1

                   
SSW80R240S


800V 18.4A 220mO@10V,9A 151W N Channel TO-247-3 MOSFETs ROHS
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Super Semiconductor 0
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AUD 3.6981

Multiples of: 1

                   
AUIRF2805STRL


Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
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Infineon 0
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AUD 3.7

Multiples of: 800

            Hexfet®      
TPW80R200MFD


TO-247-3 MOSFETs ROHS
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UNIGROUP 0
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AUD 3.702

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IPI111N15N3GAKSA1


Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO262-3
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Infineon 0
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AUD 3.7024

Multiples of: 1

            Optimos 3      
IPB020N10N5-VB


100V 180A 2m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 3.7029

Multiples of: 1

                   
NVMFS3D6N10MCLT1G


MOSFET Single N-Channel Power MOSFET 100 V 131 A 3.6mO
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ON Semiconductor 0
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AUD 3.7032

Multiples of: 1

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