MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
GS61004B-MR


MOSFET 100V 45A GaN E-mode GaNPX package Bottom-side cooled
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Gan Systems 0
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AUD 3.7062
Multiples of: 250

           Cut Tape       
IPP05CN10NG


MOSFET N-Ch 100V 100A TO220-3 OptiMOS 2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 3.7115
Multiples of: 1

                   
IRF330


IRF330 HEXFET T/HOLE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 3.7125
Multiples of: 1

140 A55 V8 mOhmsN - Channel20 V - 55 C+ 175 C330 WThrough HoleTO - 220 - 3Tube   100 nCEnhancement  
IRF1010N


Trans MOSFET N-CH 55V 85A 3-Pin(3+Tab) TO-220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 3.7125
Multiples of: 1

                enhancement  
IRFZ44STRRPBF


N-Channel 60 V 50A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 0
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AUD 3.7126
Multiples of: 1

50 A60 V28 mOhmsn - channel20 V - 55 C+ 175 C3.7 Wsmd/smtD2PAK - 2Reel    enhancement  
NTE2984


Transistor: N-MOSFET; 60V; 17A; TO220
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NTE 0
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AUD 3.7127
Multiples of: 1

                   
IRFP350PBF


N-Channel 400 V 16A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 0
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AUD 3.7127
Multiples of: 1

   N Channel      TO - 247ACTube       
BUK764R2-80E,118


MOSFET N-channel TrenchMOS standard level FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 3.7127
Multiples of: 4800

120 A80 V3.1 mOhmsn - channel20 V3 V- 55 C+ 175 C324 Wsmd/smtSOT - 404 - 3Reelsi1 channel20 V136 nCenhancement  
R6030KNXC7


MOSFET Nch 600V 30A TO-220FM Pwr MOSFET
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ROHM 0
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AUD 3.7127
Multiples of: 1

30 A600 V115 mOhmsN - Channel 3 V- 55 C+ 150 C86 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V56 nCEnhancement  
SIHG22N60AEL-GE3


MOSFET 600V Vds 30V Vgs TO-247AC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 3.7151
Multiples of: 1

21 A600 V180 mOhmsN - Channel 2 V- 55 C+ 150 C208 WThrough HoleTO - 247AC - 3 Si1 Channel10 V41 nCEnhancement  
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