MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC034N10LS5


MOSFET TRENCH >=100V
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Infineon 853
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AUD 3.6896
Multiples of: 1

                   
BSZ040N06LS5


MOSFET TRENCH 40<-<100V
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Infineon 2
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AUD 3.6942
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IRFSL38N20DPBF


MOSFET PLANAR MOSFET - PACKAGE
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Infineon 0
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AUD 3.6873
Multiples of: 1

44 A200 V54 mOhmsn - channel  - 55 C+ 175 C320 Wthrough holeTO - 262 - 3Tubesi1 channel30 V60 nCenhancement  
SIHG24N80AE-GE3


N-Channel 800V 21A (Tc) 208W (Tc) Through Hole TO-247AC
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Vishay 0
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AUD 3.6875
Multiples of: 1

21 A800 V184 mOhmsN - Channel 4 V- 55 C+ 150 C208 WSMD/SMTTO - 247AC - 3TubeSi1 Channel- 30 V , + 30 V59 nCEnhancement  
IRFP2907ZPBF


International Rectifier MOSFET MOSFT 75V 170A 4.5mOhm 180nC Qg
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Infineon 0
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AUD 3.6915
Multiples of: 140

170 A75 V4.5 mOhmsN - Channel20 V4 V- 55 C+ 175 C310 WThrough HoleTO - 247 - 3Tube   180 nC   
FDMS86150


MOSFET PT5 100V/20V Nch PowerTrench MOSFET
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ON Semiconductor 0
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AUD 3.6921
Multiples of: 3000

60 A100 V4.85 mOhmsN - Channel  - 55 C+ 150 C156 WSmd/SmtPOWER - 56ReelSi1 Channel    Powertrench Power Clip
STO33N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-LL package
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STMicroelectronics 0
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AUD 3.6929
Multiples of: 1

25 A600 V125 mOhmsN - Channel 3.25 V- 55 C+ 150 C230 WSmd/SmtTO - LL - 8Cut TapeSi1 Channel25 V33.4 nCEnhancement  
FDB86363_F085


MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 0
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AUD 3.6929
Multiples of: 1

110 A80 V2 mOhmsN - Channel20 V3 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V131 nC  Powertrench
SiHF30N60E-E3


MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
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Vishay 0
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AUD 3.6929
Multiples of: 1

29 A600 V125 mOhmsn - channel 2.8 V- 55 C+ 150 C37 Wthrough holeTO - 220 - 3 FPTubesi1 channel30 V85 nCenhancement  
IPW65R145CFD7AXKSA1


N-Channel 650V 17A (Tc) 98W (Tc) Through Hole PG-TO247-3
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Infineon 0
6 to 16 Weeks Calender.png

AUD 3.5357
Multiples of: 1

17 A650 V145 mOhmsN - Channel 4.5 V- 40 C+ 150 C98 WThrough Hole TubeSi1 Channel- 20 V , + 20 V36 nCEnhancementAEC - Q101CoolMOS
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