MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA60R160P7


MOSFET HIGH POWER_NEW
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Infineon 9
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between Thu. 01 Oct to Tue. 06 Oct
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AUD 3.5927

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IRF6641TR1PBF


MOSFET MOSFT 200V 26A 60mOhm 34nC Qg
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AUD 3.5842

Multiples of: 1

4.6 A200 V51 mOhmsn - channel20 V4.9 V + 150 C89 Wsmd/smtDirectfet - 7Reel   34 nC   
IRF6678TR1


MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
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Infineon 0
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AUD 3.5842

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30 A30 V3 mOhmsn - channel20 V - 40 C+ 150 C2.8 Wsmd/smtDirectfet - 7Reel   43 nCenhancement  
R6507ENJTL


N-Channel 650 V 7A (Tc) 78W (Tc) Surface Mount LPTS
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ROHM 0
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AUD 3.5875

Multiples of: 1

7 A650 V665 mOhmsN - Channel 2 V- 55 C+ 150 C78 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V20 nCEnhancement  
TK31V60X,LQ


MOSFET DTMOSIV-High Speed 600V 88mVGS=10V)
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Toshiba 0
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AUD 3.5883

Multiples of: 3

30.8 A600 V78 mOhmsn - channel 3.5 V- 55 C+ 150 C240 Wsmd/smtDFN - 8Reelsi1 channel30 V65 nCenhancement dtmosiv
TSA82N30M


300V 82A 46m 1PCSNChannel TO-3P-3 MOSFETs ROHS
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Truesemi 0
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AUD 3.5912

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IRFS3004TRLPBF


Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK T/R
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AUD 3.5914

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340 A40 V1.4 mOhmsN - Channel 4 V- 55 C+ 175 C380 WSmd/SmtD2PAKReelSi1 Channel20 V160 nC   
IPI60R250CPAKSA1


Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO262-3
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AUD 3.594

Multiples of: 1

            Coolmos Cp      
IRF6609TRPBF


Transistor: N-MOSFET; unipolar; 20V; 31A; 89W; DirectFET
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AUD 3.5944

Multiples of: 1

31 A20 V2.6 mOhmsN - Channel    89 WSmd/SmtDirectfet - 3Reel 1 Channel20 V46 nC   
NTBGS3D5N06C


MOSFET NFET D2PAK7 60V 3.5MO
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ON Semiconductor 0
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AUD 3.5955

Multiples of: 1

127 A60 V4.1 mOhmsN - Channel 4 V- 55 C+ 175 C115 WSMD/SMTD2PAK - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
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