MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHG30N60E-GE3


MOSFET 600V Vds 30V Vgs TO-247AC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 497
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between Thu. 01 Oct to Tue. 06 Oct
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AUD 3.5787

Multiples of: 1

29 A600 V125 mOhmsN - Channel 4 V- 55 C+ 150 C250 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V85 nCEnhancement  
STW120NF10


100V 110A 312W 10.5mO@10V,60A N Channel TO-247-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 19
Ships to you
between Thu. 01 Oct to Tue. 06 Oct
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AUD 8.0988

Multiples of: 1

110 A100 V9 mOhmsN - Channel  - 55 C+ 175 C312 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Stripfet
IR21844STRPBF-EL


MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC N T/R
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Infineon 0
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AUD 3.5636

Multiples of: 2500

                   
IRFP4229PBF-VB


TO-247AC MOSFETs ROHS
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VBsemi Elec 0
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AUD 3.5642

Multiples of: 1

                   
IRFP264PBF-VB


TO-247AC MOSFETs ROHS
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VBsemi Elec 0
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AUD 3.5642

Multiples of: 1

                   
AUIRF5210STRL


International Rectifier MOSFET Automotive MOSFET P 38A 150nC D2Pak
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Infineon 0
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AUD 3.5652

Multiples of: 800

- 38 A- 100 V60 mOhmsp - channel     smd/smtD - PAK - 3Reelsi  150 nC aec - q101 
STP11NM50N


N-Channel 500 V 8.5A (Tc) 70W (Tc) Through Hole TO-220
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STMicroelectronics 0
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AUD 3.5677

Multiples of: 1

8.5 A500 V470 mOhmsn - channel 3 V + 150 C70 Wthrough holeTO - 220 - 3Tube   19 nC   
IXTA36N30P-TRL


MOSFET IXTA36N30P TRL
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IXYS 0
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AUD 3.5688

Multiples of: 800

                   
IXTP1R6N50D2


Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) TO-220AB
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Littelfuse 0
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AUD 3.57

Multiples of: 1

                   
SiHG22N60E-E3


N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-247AC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 3.5714

Multiples of: 1

21 A600 V180 mOhmsn - channel 4 V- 55 C+ 150 C227 Wthrough holeTO - 247AC - 3Tubesi1 channel30 V57 nCenhancement  
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