MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTQ100N25P


MOSFET 100 Amps 250V 0.027 Rds
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IXYS 4
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AUD 10.9626
Multiples of: 1

100 A250 V27 mOhmsN - Channel 5 V- 55 C+ 150 C600 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V185 nCEnhancement Polarht
IRLS4030TRL7PP


MOSFET MOSFT 100V 190A 3.9mOhm 93nC-7
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Infineon 0
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AUD 3.5268
Multiples of: 1

190 A100 V3.2 mOhmsN - Channel  - 55 C+ 175 C370 WSmd/SmtD2PAKReelSi1 Channel16 V93 nCEnhancement  
AUIRF2907ZS-7P


Trans MOSFET N-CH 75V 180A Automotive 7-Pin(6+Tab) D2PAK Tube
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Infineon 0
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AUD 3.5282
Multiples of: 169

180 A75 V3.8 mOhmsN - Channel  - 55 C 300 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V170 nCEnhancement  
STW35N65M5


MOSFET N-channel 650 V 0.085ohm 27A Mdmesh
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STMicroelectronics 0
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AUD 3.5286
Multiples of: 1

27 A650 V85 mOhmsn - channel  - 55 C+ 150 C160 Wthrough holeTO - 247 - 3Tube       
SIHA100N60E-GE3


MOSFET 600V Vds; +-30V Vgs Thin-Lead TO-220
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Vishay 0
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AUD 3.5299
Multiples of: 1

30 A600 V100 mOhmsN - Channel 3 V- 55 C+ 150 C35 WThrough HoleTH in - LEAD TO - 220 - 3 FULLPAKTubeSi1 Channel30 V50 nCEnhancement  
CI47N65


650V 28.2A 88mΩ@10V,24A 391W 5V@250uA 1pF@100V N Channel 3.652nF@100V 24nC@10V -55℃~+150℃@(Tj) TO-247-3 MOSFETs ROHS
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Tokmas 0
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AUD 3.5299
Multiples of: 1

                   
SPW15N60CFD


Infineon Technologies MOSFET N-Ch 600V 13.4A TO247-3 CoolMOS CFD
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Infineon 0
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AUD 3.5319
Multiples of: 1

13.4 A600 V330 mOhmsn - channel  - 55 C+ 150 C156 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement coolmos
VS320N10AU


TO-247 MOSFETs ROHS
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Vanguard 0
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AUD 3.5321
Multiples of: 1

                   
WMLL017N10HGS


Transistor: N-MOSFET; unipolar; TOLL
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Wayon 0
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AUD 3.5333
Multiples of: 1

                   
STB18NM60ND


MOSFET N-CH 600V 0.25Ohm 13A FDmesh II
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STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 3.5334
Multiples of: 1000

13 A650 V290 mOhmsn - channel25 V4 V- 55 C+ 150 C130 Wsmd/smtD2PAK - 2Reel   34 nC   
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