MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA90R1K2C3


Infineon Technologies MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3
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Infineon 15
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AUD 3.4855
Multiples of: 1

5.1 A900 V1.2 OhmsN - Channel20 V2.5 V- 55 C+ 150 C31 WThrough HoleTO - 220FP - 3TubeSi1 Channel20 V28 nCEnhancement Coolmos
IPI100N12S305AKSA1


MOSFET N-CHANNEL 100+
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Infineon 0
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AUD 3.4854
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         Through HoleTO - 262 - 3TubeSi    Aec - Q101 
IRFS3307PBF


Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; D2PAK
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Infineon 0
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AUD 3.4866
Multiples of: 1

            Hexfet®      
IXFP8N85XM


MOSFET DiscMSFT NCh UltrJnct XClass TO-220AB/FP
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IXYS 0
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AUD 3.4873
Multiples of: 1

           Tube      Hiperfet
IPB180N04S302ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 0
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AUD 3.4873
Multiples of: 150

           Reel       
IXFQ10N80P


MOSFET
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IXYS 0
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AUD 3.4876
Multiples of: 1

   N - Channel     Through HoleTO - 3P - 3TubeSi1 Channel    Hiperfet
R6509ENJTL


N-Channel 650 V 9A (Tc) 94W (Tc) Surface Mount LPTS
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ROHM 0
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AUD 3.488
Multiples of: 1000

9 A650 V585 mOhmsN - Channel 2 V- 55 C+ 150 C94 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V24 nCEnhancement  
R6509KNJTL


N-Channel 650 V 9A (Tc) 94W (Tc) Surface Mount LPTS
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ROHM 0
6 to 16 Weeks Calender.png

AUD 3.488
Multiples of: 1000

9 A650 V585 mOhmsN - Channel 3 V- 55 C+ 150 C94 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V16.5 nCEnhancement  
IPDQ65R125CFD7AXTMA1


MOSFETs Y
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Infineon 0
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AUD 3.4886
Multiples of: 1

24 A650 V240 mOhms  4 V- 40 C+ 150 C160 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V32 nC   
IPP120N06S4-H1


Infineon Technologies MOSFET N-Ch 60V 120A TO220-3 OptiMOS-T2
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Infineon 0
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AUD 3.4892
Multiples of: 1

120 A60 V2.1 mOhmsn - channel     through holeTO - 220 - 3Tubesi1 channel    optimos
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