MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFN8459TR


International Rectifier MOSFET 40V Dual N Channel HEXFET
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AUD 3.3031
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70 A40 V5.9 mOhmsN - Channel 3 V- 55 C+ 175 C50 WSmd/SmtPQFN - 8ReelSi2 Channel20 V40 nCEnhancementAec - Q101 
IRFH7107TR2PBF


N-Channel 75 V 14A (Ta), 75A (Tc) Surface Mount 8-PQFN (5x6)
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AUD 3.3037
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75 A75 V8.5 mOhmsn - channel20 V - 55 C+ 150 C3.6 Wsmd/smtPQFN - 10 5X6Reel   48 nC   
IPP60R385CP


MOSFET COOL MOS PWR TRANS 650V
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AUD 3.3041
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9 A600 V350 mOhmsn - channel 2.5 V- 55 C+ 150 C83 Wthrough holeTO - 220 - 3Tubesi1 channel20 V22 nCenhancement coolmos
SIHB100N60E-GE3


MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
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AUD 3.3056
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30 A600 V100 mOhmsN - Channel 3 V- 55 C+ 150 C208 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V50 nCEnhancement  
SQ3585EV-T1_GE3


MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
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AUD 3.3077
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3.57 A , 2.5 A20 V49 mOhms , 140 mOhmsN - Channel, P - Channel 600 mV , 1.5 V- 55 C+ 175 C1.67 w , 1.67 WSmd/SmtTSOP - 6Cut TapeSi2 Channel12 V2.5 nC , 3.5 nCEnhancementAec - Q101Trenchfet
IPB60R145CFD7ATMA1


MOSFET HIGH POWER_NEW
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AUD 3.3125
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16 A600 V145 mOhmsN - Channel 4.5 V- 55 C+ 150 C83 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V31 nCEnhancement  
IRF3415STRL


Trans MOSFET N-CH 150V 43A 3-Pin(2+Tab) D2PAK T/R
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AUD 3.314
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NTB6410ANG


N-Channel 100 V 76A (Tc) 188W (Tc) Surface Mount D²PAK
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ON Semiconductor 0
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AUD 3.3146
Multiples of: 173

76 A100 V11 mOhmsn - channel 2 v to 4 V- 55 C+ 175 C188 Wsmd/smtD2PAK - 2    120 nC   
NVMFS6H818NWFT1G


MOSFET TRENCH 8 80V NFET POWER MOSFET
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ON Semiconductor 0
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AUD 3.3148
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123 A80 V3.1 mOhmsN - Channel 2 V- 55 C+ 175 C136 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V46 nCEnhancementAec - Q101 
IRLD024


MOSFET RECOMMENDED ALT 844-IRLD024PBF
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AUD 3.3178
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2.5 A60 V100 mOhmsn - channel  - 55 C+ 150 C1.3 Wthrough holeHVMDIP - 4Tubesi1 channel10 V enhancement  
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