MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK25E60X,S1X


N-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-220
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Toshiba 0
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AUD 3.2938
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25 A600 V105 mOhmsn - channel 2.5 V- 55 C+ 150 C180 Wthrough holeTO - 220 - 3Tubesi1 channel30 V40 nCenhancement dtmosiv
SPP80P06PHXK


Trans MOSFET P-CH 60V 80A 3-Pin(3+Tab) TO-220
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Infineon 0
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AUD 3.295
Multiples of: 50

                   
TSM60N600CI C0G


Transistor: N-MOSFET; unipolar; 600V; 4.8A; 32W; TO220FP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 0
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AUD 3.2954
Multiples of: 1

                   
WMJ023N08HGS


Transistor: N-MOSFET; unipolar; TO247-3
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Wayon 0
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AUD 3.2954
Multiples of: 1

                   
IRF7828TRPBF


Trans MOSFET N-CH 30V 13.6A 8-Pin SOIC T/R
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Infineon 0
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AUD 3.297
Multiples of: 1

           Tape And Reel    enhancement  
IRFB11N50APBF


MOSFET N Trench 500V 11A 4V @ 250uA 520 mΩ @ 6.6A,10V TO-220 (TO-220-3) RoHS
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Infineon 0
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AUD 3.2971
Multiples of: 1

                   
IRFS4115TRL7PP


N-Channel 150 V 105A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
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Infineon 0
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AUD 3.3
Multiples of: 1

99 A150 V10.3 mOhmsN - Channel  - 55 C+ 175 C380 WSmd/SmtD2PAKReelSi1 Channel20 V73 nCEnhancement  
IPB100N08S2-07


Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
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Infineon 0
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AUD 3.3
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100 A75 V7.1 mOhmsn - channel  - 55 C+ 175 C300 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V enhancementaec - q101optimos
IXTY32P05T


MOSFET TrenchP Power MOSFET
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IXYS 0
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AUD 3.3
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32 A50 V39 mOhmsp - channel     smd/smtTO - 252 - 3Tubesi      
BUK9V13-40HX


MOSFET BUK9V13-40H/SOT1205/LFPAK56D
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Nexperia 0
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AUD 3.3021
Multiples of: 1

                   
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