MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPW60R090MFD


600V 47A 77m@10V,24A 391W 5V@250uA 1PCSNChannel TO-247-3 MOSFETs ROHS
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UNIGROUP 19
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AUD 3.3251
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NCEP026N10T


TO-247 MOSFETs ROHS
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NCE Power 0
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AUD 3.3264
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BSB165N15NZ3 G


Infineon Technologies MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
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Infineon 0
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AUD 3.3269
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45 A150 V16.5 mOhmsN - Channel20 V3 V- 40 C+ 150 C78 WSmd/SmtMG - WDSON - 2ReelSi1 Channel20 V26 nCEnhancement Optimos
IRFSL7530PBF


International Rectifier MOSFET 60V Single N-Channel HEXFET Power
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Infineon 0
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AUD 3.3269
Multiples of: 1000

195 A60 V2 mOhmsn - channel 3.7 V  375 Wthrough holeTO - 262 - 3Tubesi1 channel20 V411 nCenhancement strongirfet
AUIRLS8409-7P


MOSFET N-CHANNEL 30 / 40
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Infineon 0
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AUD 3.33
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500 A40 V1.1 mOhmsn - channel 1 V- 55 C+ 175 C375 Wsmd/smtTO - 263 - 7Tubesi1 channel16 V177 nCenhancementaec - q101 
TSK80R240S1


MOSFET N Channel 800V 18.4A(Tc) 4.5V @ 250uA 240mO @ 9A,10V TO-247 RoHS
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Truesemi 0
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AUD 3.3311
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2SK2545(Q,T)


MOSFETS N-CH 600V 6A 0.9 OHM ELECTRONICS PART
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Toshiba 0
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AUD 3.3311
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6 A600 V1.25 Ohmsn - channel30 V - 55 C+ 150 C40 Wthrough holeTO - 220 - 3     enhancement  
HUFA76645S3ST_F085


Fairchild Semiconductor MOSFET 100V 75A 0.015ohm N-CH
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ON Semiconductor 0
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AUD 3.3328
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75 A100 V14 mOhmsn - channel16 V - 55 C+ 175 C310 Wsmd/smtD2PAK - 2Reelsi1 channel16 V enhancement  
FDB8443


N-Channel 40 V 25A (Ta), 120A (Tc) 188W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 0
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AUD 3.3333
Multiples of: 1

25 A40 V2.3 mOhmsn - channel20 V - 55 C+ 175 C188 Wsmd/smtD2PAK - 2Reelsi1 channel20 V enhancement powertrench
LSD65R105HF


MOSFET TO-220F RoHS
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Lonten Semiconductor 0
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AUD 3.3349
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First...52065207520852095210...

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