MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTP42N25P


MOSFET 42 Amps 250V 0.084 Rds
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 3.3474

Multiples of: 1

42 A250 V84 mOhmsN - Channel 5.5 V- 55 C+ 150 C300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V70 nCEnhancement Polarht
IRFS41N15DTRRP


Transistor: N-MOSFET; unipolar; 150V; 41A; 200W; D2PAK
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Infineon 0
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AUD 3.3489

Multiples of: 800

            Hexfet®      
SIHA22N60EF-GE3


N-Channel 600 V 19A (Tc) 33W (Tc) Through Hole TO-220 Full Pack
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Vishay 0
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AUD 3.35

Multiples of: 1

19 A600 V182 mOhmsN - Channel 2 V- 55 C+ 150 C33 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V96 nCEnhancement  
IPI100N10S3-05


Infineon Technologies MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS-T
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Infineon 0
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AUD 3.3524

Multiples of: 1

100 A100 V4.8 mOhmsn - channel  - 55 C+ 175 C300 Wthrough holeTO - 262 - 3Tubesi1 channel20 V enhancementaec - q101optimos
AUIRF6215STRL


Trans MOSFET P-CH 150V 13A Automotive 3-Pin(2+Tab) D2PAK T/R
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Infineon 0
6 to 16 Weeks Calender.png

AUD 3.3524

Multiples of: 1

- 13 A- 150 V290 mOhmsP - Channel     Smd/SmtTO - 252 - 3Cut TapeSi    Aec - Q101 
SQM100P10-19L_GE3-VB


TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 3.3526

Multiples of: 1

                   
AUIRF6215


International Rectifier MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms
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Infineon 0
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AUD 3.3534

Multiples of: 1

- 13 A- 150 V580 mOhmsP - Channel  - 55 C 110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44 nCEnhancementAec - Q101 
BUK455-200A


BUK455-200A POWERMOS TRANSISTOR T/HOLE
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Philips 0
Ships to you
by Fri. 11 Sep
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AUD 3.3537

Multiples of: 1

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BUK455-60A/B


BUK455-60A/B BUK455-60A
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Philips 0
Ships to you
by Fri. 11 Sep
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AUD 3.3545

Multiples of: 1

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IPB240N04S4R9ATMA1


MOSFET N-CHANNEL_30/40V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 3.3549

Multiples of: 1000

   N - Channel     Smd/SmtTO - 263 - 7Cut TapeSi1 Channel   Aec - Q101 
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