MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD18502Q5B


N-Channel 40 V 26A (Ta), 100A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6)
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Texas Instruments 216
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AUD 3.1075
Multiples of: 1

204 A40 V3.3 mOhmsN - channel20 V1.8 V- 55 C+ 150 C3.2 WSmd/smtVSON - CLIP - 8ReelSi1 Channel20 V52 nC  Nexfet
IRL3713SPBF


Transistor: N-MOSFET; unipolar; 30V; 200A; 200W; D2PAK
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Infineon 0
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AUD 3.0984
Multiples of: 1

200 A30 V4 mOhmsN - Channel  - 55 C+ 175 C200 WSmd/SmtD2PAKTubeSi1 Channel20 V75 nCEnhancement  
IPW65R190C6


MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
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Infineon 0
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AUD 3.0991
Multiples of: 193

20.2 A650 V190 mOhmsn - channel  - 55 C+ 150 C151 Wthrough holeTO - 247 - 3Tubesi1 channel20 V73 nC  coolmos
SIHP30N60E-GE3


Vishay Semiconductors MOSFET 600V 125mOhm10V 29A N-Ch E-SRS
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Vishay 0
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AUD 3.1
Multiples of: 50

29 A600 V125 mOhmsN - Channel 2.8 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V85 nCEnhancement E Series
IPP80N06S2H5AKSA2


MOSFET MOSFET_40V 60V
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Infineon 0
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AUD 3.1012
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   N - Channel     Through HoleTO - 220 - 3TubeSi1 Channel   Aec - Q101 
AUIRF7736M2TR1


MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms
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AUD 3.1014
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108 A40 V3 mOhmsn - channel20 V - 55 C+ 175 C63 Wsmd/smtDirectfet - 9Reel   72 nCenhancement  
IRFP064VPBF


MOSFET 60V 1 N-CH HEXFET 5.5mOhms 173.3nC
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Infineon 0
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AUD 3.1014
Multiples of: 1

130 A60 V5.5 mOhmsn - channel20 V - 55 C+ 175 C250 Wthrough holeTO - 247 - 3Tube   173.3 nCenhancement  
AOT380A60L


Transistor: N-MOSFET; unipolar; 600V; 7.2A; 131W; TO220
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Alpha & Omega 0
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AUD 3.1015
Multiples of: 1

                   
AOTF380A60L


Transistor: N-MOSFET; unipolar; 600V; 7.2A; 27W; TO220F
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Alpha & Omega 0
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AUD 3.1015
Multiples of: 1

                   
SIHG25N40D-E3


MOSFET 450V 25A 278W .17ohms @ 10V
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Vishay 0
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AUD 3.1016
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14 A500 V400 mOhmsN - Channel 5 V- 55 C+ 150 C208 WThrough HoleTO - 247ACTubeSi1 Channel30 V29 nCEnhancement  
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