MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6620TRPBF


International Rectifier MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
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Infineon 1
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AUD 4.0162
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27 A20 V3.6 mOhmsN - Channel20 V2.45 V- 40 C+ 150 C89 WSmd/SmtDirectfetReelSi1 Channel20 V28 nC   
CSD18502Q5BT


MOSFET 40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150
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Texas Instruments 0
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AUD 3.08
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204 A40 V3.3 mOhmsN - channel 1.5 V- 55 C+ 150 C156 WSmd/smtVSON - CLIP - 8ReelSi1_Channel+/- 20 V52 nCEnhancement Nexfet
IRFP360PBF


MOSFET N Trench 400V 23A 200 mΩ @ 14A,10V TO-247 (AC) RoHS
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Infineon 0
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AUD 3.0819
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STH272N6F7-6AG


MOSFET Automotive-grade N-channel 60 V 0.95 mOhm typ. 180 A STripFET F7 Power MOSFET in H2PAK-6 package
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STMicroelectronics 0
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AUD 3.0824
Multiples of: 1000

         Smd/SmtH2PAK - 6 Si    Aec - Q101Stripfet
IRFS3207ZPBF


Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; D2PAK
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Infineon 0
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AUD 3.0825
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170 A75 V3.3 mOhmsN - Channel    300 WSmd/SmtD2PAKTubeSi1 Channel20 V120 nC   
SQM120N03-1m5L_GE3


N-Channel 30 V 120A (Tc) 375W (Tc) Surface Mount TO-263
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Vishay 0
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AUD 3.0836
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120 A30 V1.5 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V179 nCEnhancementAec - Q101Trenchfet
TP65H300G4LSG


MOSFET GAN FET 650V 6.5A PQFN88
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Transphorm 0
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AUD 3.0857
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IRF720


MOSFET N-Chan 400V 3.0 Amp
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Vishay 0
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AUD 3.0859
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3.3 A400 V1.8 Ohmsn - channel  - 55 C+ 150 C50 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement  
BMS3003-1E


ON Semiconductor MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 3.086
Multiples of: 72

- 78 A60 V6.5 mOhmsp - channel   + 150 C40 Wthrough holeTO - 220 - 3Tubesi1 channel4 V285 nCenhancement  
NCEP02580D


250V 80A 16mΩ@10V,40A 3.5V@250uA null TO-263 MOSFETs ROHS
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NCE Power 0
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AUD 3.0865
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