MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STW28N60DM2


MOSFET PTD HIGH VOLTAGE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 3.0554

Multiples of: 600

22 A600 V0.13 Ohmsn - channel 3 V- 55 C+ 150 C190 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V39 nCenhancement mdmesh
STD16N60M6


MOSFET N-channel 600 V, 0.260 Ohm typ 12 A MDmesh M6 Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 3.0575

Multiples of: 1

12 A650 V320 mOhmsN - Channel 4.75 V- 55 C+ 150 C110 WSMD/SMT Mdmesh , Cut Tape , Reel , ReelSi1 Channel- 25 V , + 25 V16.7 nCEnhancement MDmesh
STB50NF25


MOSFET Hi Vltg Pwr SCHOTTKY RECTIF
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STMicroelectronics 0
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AUD 3.0577

Multiples of: 1

45 A250 V69 mOhmsn - channel  - 55 C+ 150 C160 Wsmd/smtD2PAKReelsi1 channel20 V enhancement  
TK31V60W5,LVQ


MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A
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Toshiba 0
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AUD 3.0596

Multiples of: 2500

30.8 A600 V87 mOhmsN - Channel 3 V + 150 C240 WSmd/SmtDFN8X8 - 5Cut TapeSi1 Channel30 V105 nCEnhancement Dtmosiv
SiHG25N40D-GE3


MOSFET 400V 170mOhm@10V 25A N-Ch D-SRS
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Vishay 0
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AUD 3.0607

Multiples of: 1

14 A500 V400 mOhmsN - Channel 5 V- 55 C+ 150 C208 WThrough HoleTO - 247 ACBulkSi1 Channel30 V29 nCEnhancement  
SPA12N50C3


MOSFET N-Ch 500V 11.6A TO220FP-3 CoolMOS C3
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Infineon 0
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AUD 3.0609

Multiples of: 1

11.6 A500 V380 mOhmsn - channel  - 55 C+ 150 C33 Wthrough holeTO - 220 - 3 FPTubesi1 channel20 V enhancement coolmos
SIDR610DP-T1-GE3


MOSFET 200V Vds -+20V Vgs PowerPAK SO-8DC
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Vishay 0
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AUD 3.0614

Multiples of: 1

39.6 A200 V31.9 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtPOWERPAK - SO - 8DC - 8Cut TapeSi1 Channel20 V38 nCEnhancement Trenchfet
IRLP3034PBF


Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
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Infineon 0
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AUD 3.0625

Multiples of: 1

327 A40 V2 mOhmsN - Channel    341 WThrough HoleTO - 247ACTubeSi1 Channel20 V108 nC   
IRFS7730PBF


International Rectifier MOSFET 75V Single N-Channel HEXFET Power
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 3.0642

Multiples of: 1

195 A75 V2.6 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C375 WSmd/SmtD - PAK - 3TubeSi1 Channel20 V271 nCEnhancement Strongirfet
IXTA180N085T


MOSFET 180 Amps 85V 5.5 Rds
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IXYS 0
6 to 16 Weeks Calender.png

AUD 3.0643

Multiples of: 1

180 A85 V5.5 mOhmsn - channel  - 55 C+ 175 C430 Wsmd/smtD2PAK - 3Tube    enhancement  
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