MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT012N08N5


MOSFET TRENCH 40<-<100V
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Infineon 6308
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AUD 3.0153
Multiples of: 1

                   
IPP65R190CFD


MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
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Infineon 0
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AUD 3.0163
Multiples of: 1

17.5 A650 V190 mOhmsN - Channel30 V4 V  151 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V68 nC  Coolmos
IPP80N08S406AKSA1


MOSFET N-CHANNEL 75/80V
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Infineon 0
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AUD 3.0171
Multiples of: 1

   N - Channel     Through HoleTO - 220 - 3TubeSi1 Channel   Aec - Q101 
TK155A65Z,S4X


N-Channel 650V 18A (Ta) 40W (Tc) Through Hole TO-220SIS
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Toshiba 0
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AUD 3.0171
Multiples of: 50

          TO - 220 - 3 FULL PACKTubeMosfet (Metal Oxide)      
BUK7610-100B,118


N-Channel 100 V 75A (Tc) 300W (Tc) Surface Mount D2PAK
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Nexperia 0
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AUD 3.0192
Multiples of: 1

110 A100 V10 mOhmsN - Channel  - 55 C+ 175 C300 WSmd/SmtD2PAKReelSi1 Channel20 V Enhancement  
SQM200N04-1m7L_GE3


MOSFET 40V 200A 375 AEC-Q101 Qualified
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Vishay 0
6 to 16 Weeks Calender.png

AUD 3.0192
Multiples of: 1

200 A40 V1.7 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V194 nCEnhancementAec - Q101Trenchfet
NVB260N65S3


MOSFET SF3 650V EASY 260MOHM D2PAK AUTO
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ON Semiconductor 0
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AUD 3.0192
Multiples of: 1

                   
SUP50010E-GE3


MOSFET 60V Vds; 20V Vgs TO-220AB
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Vishay 0
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AUD 3.0192
Multiples of: 1

150 A60 V2 mOhmsN - Channel 2 V- 55 C+ 175 C375 WThrough HoleTO - 220AB - 3TubeSi1 Channel20 V212 nCEnhancement  
TK3R2E06PL,S1X


MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TO-220ABOS PD=168W F=1MHZ
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Toshiba 0
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AUD 3.02
Multiples of: 1

160 A60 V3.2 mOhmsN - Channel 1.5 V + 175 C168 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V71 nCEnhancement  
AUIRLS3036-7TRL


International Rectifier MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET
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Infineon 0
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AUD 3.0205
Multiples of: 800

300 A60 V2.2 mOhmsN - Channel   + 175 C380 WSmd/SmtTO - 252 - 3ReelSi1 Channel 110 nC Aec - Q101 
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First...51665167516851695170...

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