MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK3878(STA1,E,S)


Toshiba
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Toshiba 217
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AUD 2.8423
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FDP18N50-VB


650V 20A 190m@10V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8399
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STP21N65M5-VB


650V 20A 160mΩ@10V 4.5V 1PCSNChannel TO-220AB MOSFETs ROHS
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AUD 2.8399
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STF25N80K5-VB


800V 18A 220mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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AUD 2.8399
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IPB65R190CFD-VB


650V 20A 160mΩ@10V 5V 1PCSNChannel TO-263 MOSFETs ROHS
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AUD 2.8399
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TK17N65W-VB


650V 20A 160m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8399
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FDB9406-F085


MOSFET 40V, 110A, 1.8m Ohm NChannel PowerTrench
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ON Semiconductor 0
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AUD 2.8404
Multiples of: 800

110 A40 V1.8 mOhmsN - Channel 2.83 V- 55 C+ 175 C176 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V107 nC  Powertrench
SQM40014EM_GE3


MOSFET 40V Vds +/-20V Vgs AEC-Q101 Qualified
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Vishay 0
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AUD 2.8431
Multiples of: 800

200 A40 V840 uOhmsN - Channel 3 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 7 Si1 Channel20 V158 nCEnhancementAec - Q101Trenchfet
IRFI4019H-117P


Transistor: N-MOSFET x2; unipolar; 150V; 8.7A; 18W; TO220FP-5
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Infineon 0
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AUD 2.8435
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8.7 A150 V80 mOhmsN - Channel  - 40 C 18 WThrough HoleTO - 220 - 3 FPTubeSi2 Channel20 V13 nCEnhancement  
IPP60R125P6


Infineon Technologies MOSFET HIGH POWER PRICEPERFORM
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Infineon 0
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AUD 2.8443
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100 A600 V125 OhmsN - Channel 3.5 V- 55 C+ 150 C219 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V56 nCEnhancement Coolmos
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