MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IPB117N20NFD


Infineon Technologies MOSFET N-Ch 200V 84A D2PAK-2
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Infineon 1722
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AUD 3.0543
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84 A200 V10.3 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V87 nCEnhancement Optimos
NTMFS6H800NT1G


MOSFET TRENCH 8 80V NFET POWER MOSFET
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ON Semiconductor 8
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AUD 5.1578
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203 A80 V1.8 mOhmsN - Channel 2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V85 nCEnhancement  
IRF6629TRPBF


Transistor: N-MOSFET; unipolar; 25V; 29A; 100W; DirectFET
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Infineon 0
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AUD 2.8354
Multiples of: 4800

            Hexfet®      
IPD90N04S3-H4


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T
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Infineon 0
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AUD 2.8358
Multiples of: 2500

90 A40 V4.3 mOhmsn - channel     smd/smtTO - 252 - 3Reelsi1 channel   aec - q101optimos
SI7194DP-T1-GE3


Vishay Semiconductors MOSFET 25V 60A 83W 2.0mohm 10V
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Vishay 0
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AUD 2.8362
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38 A25 V2 mOhmsn - channel20 V - 55 C+ 150 C5.4 Wsmd/smtSO - 8Reelsi   enhancement trenchfet
BUK7607-30B,118


Trans MOSFET N-CH 30V 108A Automotive 3-Pin(2+Tab) D2PAK T/R
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NXP 0
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AUD 2.8375
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           Tape And Reel    enhancement  
IPI70N10SL-16


MOSFET N-Ch 100V 70A I2PAK-3 SIPMOS
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Infineon 0
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AUD 2.8381
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70 A100 V16 mOhmsN - Channel  - 55 C+ 175 C250 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V EnhancementAec - Q101Sipmos
NTTFS5D9N08HTWG


MOSFET T8 80V DFN POWER CLIP 3X3
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ON Semiconductor 0
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AUD 2.8382
Multiples of: 1

84 A80 V5.9 mOhmsN - Channel 4 V- 55 C+ 175 C100 WSMD/SMTWDFN - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V20 nCEnhancement  
IRFP26N60LPBF-VB


650V 13A 208W 0.19@10V,11A 4V@250uA TO-247AC MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8399
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K16E60W-VB


650V 13A 208W 0.19@10V,11A 4V@250uA TO-220AB MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8399
Multiples of: 1

                   
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