MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMTS0D6N04CLTXG


MOSFET T6 40V LL PQFN8*8 EXPANSI
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 2.8265
Multiples of: 3000

554.5 A40 V420 uOhmsN - Channel 1.2 V- 55 C+ 175 C245.4 WSmd/SmtPOWER88 - 8Cut TapeSi1 Channel20 V265 nCEnhancement  
STF33N65M2


N-Channel 650 V 24A (Tc) 34W (Tc) Through Hole TO-220FP
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STMicroelectronics 0
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AUD 2.8268
Multiples of: 1000

24 A650 V117 mOhmsN - Channel 2 V + 150 C34 WThrough HoleTO - 220FP - 3ReelSi1 Channel25 V41.5 nCEnhancement Mdmesh
SIHH11N60E-T1-GE3


MOSFET E-Series Vds 600V Rds(On) 0.339 @10V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 2.8269
Multiples of: 1

11 A600 V295 mOhmsN - Channel 4 V- 55 C+ 150 C114 WSmd/SmtPOWERPAK - 8X8 - 4Cut TapeSi1 Channel30 V31 nCEnhancement  
FDA16N50_F109


MOSFET 500V 16.5A NCH
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ON Semiconductor 0
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AUD 2.8286
Multiples of: 1

16.5 A500 V380 mOhmsn - channel  - 55 C+ 150 C205 Wthrough holeTO - 3PNTubesi1 channel30 V enhancement unifet
TK100A10N1,S4X


Toshiba MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
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Toshiba 0
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AUD 2.8291
Multiples of: 1

100 A100 V3.1 mOhmsn - channel 2 v to 4 V- 55 C+ 150 C45 Wthrough holeTO - 220 - 3 si1 channel20 V140 nCenhancement dtmosiv
SiRS4301DP-T1-GE3


MOSFETs P-Channel 30 V (D-S) MOSFET PowerPAK SO-8, 1.5 mohm a. 10V, 2.3 mohm a. 4.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 2.8294
Multiples of: 1

227 A30 V1.5 mOhmsP - Channel 2.3 V- 55 C+ 150 C132 WSMD/SMTPOWERPAK - SO - 8S Si1 Channel- 20 V , + 20 V365 nCEnhancement  
FDP5690


Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB Tube
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ON Semiconductor 0
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AUD 2.8302
Multiples of: 236

           Rail/Tube    enhancement  
AUIRF2907Z


International Rectifier MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms
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Infineon 0
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AUD 2.8311
Multiples of: 1

170 A75 V4.5 mOhmsN - Channel20 V - 55 C 300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V180 nCEnhancement  
FDBL9401L-F085


MOSFET NMOS LL TOLL 40V 0. 55 MOH
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ON Semiconductor 0
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AUD 2.8348
Multiples of: 2000

300 A40 V550 uOhmsN - Channel 1 V- 55 C+ 175 C429 WSmd/SmtH - PSOF - 8Cut Tape 1 Channel20 V376 nCEnhancementAec - Q101 
BUK7613-100E


MOSFET, N-CH, 100V, 72A, D2PAK
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Nexperia 0
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AUD 2.835
Multiples of: 1

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