MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP064PBF


N-Channel 60 V 70A (Tc) 300W (Tc) Through Hole TO-247AC
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Vishay 6
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AUD 8.7756
Multiples of: 1

         Through HoleTO - 247 - 3TubeSi      
PSMN1R8-30PL,127


MOSFET N-CHAN 30V 100A
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Nexperia 0
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AUD 2.8077
Multiples of: 1000

100 A30 V1.8 mOhmsN - Channel  - 55 C+ 175 C270 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V    
IKP20N60TA-VB


650V 20A 190m@10V 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.8102
Multiples of: 1

                   
BSC350N20NSFDATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 0
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AUD 2.8105
Multiples of: 1

35 A200 V31 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V30 nCEnhancement Optimos
SIHB22N60E-E3


Vishay Semiconductors MOSFET 600V 180mOhm10V 21A N-Ch E-SRS
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Vishay 0
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AUD 2.8105
Multiples of: 1

21 A650 V180 mOhmsn - channel 4 V- 55 C+ 150 C227 Wsmd/smtTO - 263 - 3-si1 channel30 V57 nCenhancement  
TPW65R120M


650V 30A 105mO@10V,15A 219W N Channel TO-247-3 MOSFETs ROHS
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UNIGROUP 0
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AUD 2.8107
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STD12N50DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 2.811
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11 A500 V350 mOhmsn - channel 4 V- 55 C+ 150 C110 Wsmd/smtTO - 252 - 3Reelsi1 channel25 V120 nCenhancement mdmesh
IPL60R210P6AUMA1


Transistor: N-MOSFET; unipolar; 600V; 19.2A; 151W; PG-VSON-4
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Infineon 0
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AUD 2.8115
Multiples of: 3000

            Coolmos P6      
MCP2D6N10Y-BP


MOSFETs N-CHANNEL MOSFET,TO-220AB(H)
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Micro Commercial Components (MCC) 0
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AUD 2.8129
Multiples of: 1

240 A100 V2.3 mOhmsN - Channel 2.8 V- 55 C+ 150 C208 WThrough HoleTO - 220AB - 3BulkSi1 Channel- 20 V , + 20 V257 nCEnhancement  
2SJ526-E


Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220FM Box
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Renesas 0
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AUD 2.8145
Multiples of: 1

                   
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