MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP028N12LL


TOLL MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 1980
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AUD 2.7891
Multiples of: 1

                   
TK16E60W5,S1VX


N-Channel 600 V 15.8A (Ta) 130W (Tc) Through Hole TO-220
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Toshiba 0
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AUD 2.7885
Multiples of: 1

15.8 A600 V180 mOhmsn - channel 3 V- 55 C+ 150 C130 Wthrough holeTO - 220 - 3Tubesi1 channel30 V43 nCenhancement  
SIHA20N50E-GE3


MOSFET 500V N-CH
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Vishay 0
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AUD 2.7885
Multiples of: 1

19 A500 V184 mOhmsN - Channel 4 V- 55 C+ 150 C34 WThrough Hole TubeSi1 Channel- 30 V , 30 V46 nCEnhancement  
FDPF2710T


MOSFET 250V N-Channel PowerTrench
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 2.79
Multiples of: 1000

   n - channel  - 55 C+ 150 C through holeTO - 220FTube       
STB15N80K5


STMicroelectronics MOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A
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STMicroelectronics 0
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AUD 2.79
Multiples of: 1000

14 A800 V300 mOhmsN - Channel 4 V- 55 C+ 150 C190 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V32 nCEnhancement MDmesh
TSM60N380CH


MOSFET 700V Power MOSFET Superjunction N-chan
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 0
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AUD 2.7929
Multiples of: 15000

11 A600 V310 mOhmsn - channel 2 V- 55 C+ 150 C125 Wthrough holeTO - 251 - 3Tubesi1 channel10 V20.5 nCenhancement  
VN1206L-G-P002


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 0
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AUD 2.7929
Multiples of: 2000

230 mA120 V10 Ohmsn - channel  - 55 C+ 150 C1 Wthrough holeTO - 92 - 3Reel 1 channel30 V enhancement  
IPP60R250CPXKSA1


Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO220-3
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Infineon 0
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AUD 2.7943
Multiples of: 15

            coolmos cp      
NTMYS5D3N04CTWG


MOSFET 40V 5.3 mOhm 71A Single N-Channel
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ON Semiconductor 0
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AUD 2.7945
Multiples of: 1

71 A40 V5.3 mOhmsN - Channel 3.5 V- 55 C+ 175 C50 WSMD/SMTLFPAK - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V16 nCEnhancement  
STB34N50DM2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 2.7947
Multiples of: 1

26 A500 V120 mOhmsn - channel 4 V- 55 C+ 150 C190 Wsmd/smtTO - 252 - 3Reelsi1 channel+/- 30 V44 nCenhancementaec - q101mdmesh
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