MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJQ144AE-T1_GE3


MOSFET Auto N-Channel 40V 175C
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Vishay 0
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AUD 2.7522

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575 A40 V900 uOhmsN - Channel 3.5 V- 55 C+ 175 C600 WSMD/SMTPOWERPAK - 8X8 - 4Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V116 nCEnhancement TrenchFET
TK20E60W5-VB


600V 20A 160mΩ@10V 4.5V 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.7525

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FIR18N50FG-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.7525

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HT7202


80V 400A 2mΩ@10V 4V N Channel TOLL MOSFETs ROHS
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HXY MOS 0
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AUD 2.7546

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RSS070P05HZGTB


MOSFET AECQ
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ROHM 0
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AUD 2.7555

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2SK3565(Q,M)


Transistor: N-MOSFET; unipolar; 900V; 5A; 45W; TO220FP
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Toshiba 0
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AUD 2.7556

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PSMN2R0-60ES.127


Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; I2PAK
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Nexperia 0
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AUD 2.7556

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SQM110P06-8m9L_GE3


MOSFET P-Channel 60V Automotive MOSFET
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Vishay 0
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AUD 2.7563

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110 A60 V7.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C230 WSmd/SmtTO - 263 - 3 Si1 Channel20 V200 nCEnhancementAec - Q101Trenchfet
SIHF22N60S-E3


MOSFET 600V N-Channel Super junction TO-220FP
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Vishay 0
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AUD 2.7569

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22 A600 V190 mOhmsn - channel 4 V- 55 C+ 150 C250 Wthrough holeTO - 220 - 3 FPTubesi1 channel30 V75 nCenhancement  
STB80NF55L-06T4


Transistor: N-MOSFET; unipolar; 55V; 80A; 300W; D2PAK
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STMicroelectronics 0
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AUD 2.7569

Multiples of: 1

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