MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZVP2110A


ZVP2110A plessey
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Plessey 0
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AUD 2.7229

Multiples of: 1

                   
NTB6412ANT4G


MOSFET NFET D2PAK 100V 59A 20MO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 2.7234

Multiples of: 246

41 A100 V18.2 mOhmsn - channel20 V - 55 C+ 175 C167 Wsmd/smtD2PAK - 3Reel   100 nC   
SPA06N60C3


MOSFET N-Ch 650V 6.2A TO220FP-3 CoolMOS C3
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Infineon 0
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AUD 2.7239

Multiples of: 1

6.2 A600 V750 mOhmsn - channel  - 55 C+ 150 C32 Wthrough holeTO - 220 - 3 FPTubesi1 channel20 V enhancement coolmos
TK17V65W,LQ


MOSFET DFN8x8-OS PD=156W 1MHz PWR MOSFET TRNS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 2.7246

Multiples of: 2500

17.3 A650 V210 mOhmsN - Channel 3.5 V- 55 C+ 150 C156 WSmd/SmtDFN - 5Cut TapeSi1 Channel30 V45 nCEnhancement Dtmosiv
SIHG14N50D-E3


Vishay Semiconductors MOSFET 500V 400mOhm10V 14A N-Ch D-SRS
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Vishay 0
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AUD 2.7246

Multiples of: 500

14 A500 V400 mOhmsn - channel 5 V- 55 C+ 150 C208 Wthrough holeTO - 247 - 3Tubesi1 channel30 V29 nC   
SQM120N04-1m7_GE3


MOSFET 40V 120A 375W AEC-Q101 Qualified
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Vishay 0
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AUD 2.7246

Multiples of: 1

120 A40 V1.4 mOhmsN - Channel 2.5 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V310 nCEnhancementAec - Q101Trenchfet
IRF8010SPBF


MOSFET 100V N-CH HEXFET 15mOhms 81nC
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Infineon 0
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AUD 2.7247

Multiples of: 50

80 A100 V15 mOhmsN - Channel  - 55 C+ 175 C260 WSmd/SmtTO - 252 - 3TubeSi1 Channel20 V81 nCEnhancement  
IPW65R155CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 0
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AUD 2.7254

Multiples of: 1

15 A700 V155 mOhmsN - Channel 4.5 V- 55 C+ 150 C77 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
IPB011N04LGXT


Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 2.7254

Multiples of: 1000

                   
STP11NM60FP


Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
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STMicroelectronics 0
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AUD 2.7257

Multiples of: 1

11 A600 V450 mOhmsn - channel30 V - 65 C+ 150 C35 Wthrough holeTO - 220 - 3Tube    enhancement  
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