MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4942DY-T1-E3


MOSFET 40V 7.4A 2.1W 21mohm 10V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 2.7486
Multiples of: 1

5.3 A40 V21 mOhmsN - Channel20 V - 55 C+ 150 C1.1 WSmd/SmtSOIC - 8 NarrowReel    Enhancement  
IRF6626TR1PBF


Transistor: N-MOSFET; unipolar; 30V; 16A; 42W; DirectFET
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Infineon 0
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AUD 2.7486
Multiples of: 1

16 A30 V7.1 mOhmsN - Channel20 V   42 WSmd/SmtDirectfet - 7Reel   19 nC   
WML26N65C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 650V; 20A; 34W
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Wayon 0
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AUD 2.7492
Multiples of: 1

            Sj - Mosfet C2      
SIZ700DT-T1-GE3


MOSFET 20V 16A 2.36/2.8W 8.6/5.8mohm @ 10V
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Vishay 0
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AUD 2.75
Multiples of: 1

16 A20 V7 mOhms , 4.7 mOhmsN - Channel16 V - 55 C+ 150 C2.36 w , 2.8 WSmd/SmtWDFN - 6Reel    Enhancement  
SIHA180N60E-GE3


MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
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Vishay 0
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AUD 2.75
Multiples of: 1

19 A600 V180 mOhmsN - Channel 3 V- 55 C+ 150 C33 WThrough HoleTO - 220FP - 3 Si1 Channel30 V33 nCEnhancement  
SUD15N15-95-BE3


MOSFET 150V N-CH (D-S) 175 DEG.C
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Vishay 0
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AUD 2.75
Multiples of: 1

15 A150 V95 mOhmsN - Channel 2 V- 55 C+ 175 C62 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancement  
IPP60R280E6


MOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
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Infineon 0
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AUD 2.7501
Multiples of: 243

13.8 A600 V250 mOhmsn - channel  - 55 C+ 150 C104 Wthrough holeTO - 220Tubesi1 channel20 V   coolmos
IPB60R250CP


MOSFET COOL MOS N-CH 600V 0.250Ohms
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Infineon 0
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AUD 2.7501
Multiples of: 243

12 A600 V220 mOhmsn - channel 2.5 V- 55 C+ 150 C104 Wsmd/smtTO - 263Reelsi1 channel20 V35 nCenhancement coolmos
TK2R4A08QM,S4X


MOSFET UMOS10 TO-220SIS 80V 2.4mohm
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AUD 2.7501
Multiples of: 50

100 A80 V2.44 mOhmsN - Channel 3.5 V-+ 175 C47 WThrough HoleTO - 220SIS - 3TubeSi1 Channel- 20 V , + 20 V179 nCEnhancement  
TK16E60W,S1VX(S


Transistor: N-MOSFET; unipolar; 600V; 15.8A; 130W; TO220
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Toshiba 0
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AUD 2.7502
Multiples of: 1

                   
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