MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP120P04P4L-03


Infineon Technologies MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 2.7781

Multiples of: 1

- 120 A- 40 V3.1 mOhmsp - channel 1.2 V- 55 C+ 175 C136 Wthrough holeTO - 220 - 3Tubesi1 channel- 4.5 V180 nCenhancementaec - q101optimos
IPB120N06S403ATMA2


MOSFET N-Ch 60V 120A D2PAK-2
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Infineon 0
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AUD 2.7781

Multiples of: 1

120 A60 V2.8 mOhmsN - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
FDP054N10


Fairchild Semiconductor MOSFET 100V N-Chan PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 2.78

Multiples of: 1000

144 A100 V5.5 mOhmsN - Channel20 V - 55 C+ 175 C263 WSmd/SmtTO - 220 - 3TubeSi1 Channel20 V156 nC  Powertrench
IRFS4310PBF


Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
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Infineon 0
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AUD 2.7801

Multiples of: 250

   N - Channel  - 55 C+ 175 C Smd/SmtD2PAKTube       
IPP65R190E6


MOSFET N-Ch 700V 20.2A TO220-3
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Infineon 0
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AUD 2.7806

Multiples of: 1

20.2 A650 V170 mOhmsn - channel 2.5 V- 55 C+ 150 C151 Wthrough holeTO - 220 - 3Tubesi1 channel20 V73 nCenhancement coolmos
AUIRF1010ZSTRL


Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 2.781

Multiples of: 800

            Hexfet®      
CSD17559Q5T


Texas Instruments MOSFET 30V N-Ch NexFET Pwr MOSFET
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Texas Instruments 0
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AUD 2.781

Multiples of: 1

100 A30 V1.15 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtVSON - CLIP - 8ReelSi1 Channel20 V51 nCEnhancement Nexfet
IPW60R280C6


N-Channel 600 V 13.8A (Tc) 104W (Tc) Through Hole PG-TO247-3-41
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Infineon 0
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AUD 2.781

Multiples of: 1

13.8 A600 V250 mOhmsn - channel 2.5 V- 55 C+ 150 C104 Wthrough holePG - TO 247 - 3Tubesi1 channel20 V43 nCenhancement coolmos
LSNC60R180HT


MOSFET N Channel 600V 20A(Tc) 4.5V @ 250uA 180mO @ 10A,10V DFN8x8 RoHS
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Lonten Semiconductor 0
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AUD 2.7826

Multiples of: 1

                   
BUK962R8-60E


MOSFET, N-CH, 60V, 120A, D2PAK
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NXP 0
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AUD 2.7846

Multiples of: 1

   N Channel               
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