MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCPF11N60T


Fairchild Semiconductor MOSFET SUPERFET
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ON Semiconductor 43
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AUD 6.8615
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11 A600 V320 mOhmsn - channel  - 55 C+ 150 C36 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
TK16A60W5-VB


600V 18A 230mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.4231
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SUM70040M-GE3


MOSFET N-Channel 100V (D-S) ThunderFET
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Vishay 0
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AUD 2.4238
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120 A100 V4.6 mOhmsN - Channel 2.5 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V76 nCEnhancement Trenchfet
IRFBC30STRLPBF


MOSFET N-Chan 600V 3.6 Amp
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Vishay 0
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AUD 2.4238
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKReelSi      
IRFBC30SPBF


MOSFET N-Chan 600V 3.6 Amp
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Vishay 0
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AUD 2.4238
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   N - Channel  - 55 C+ 150 C Smd/SmtD2PAKTubeSi      
IXTY1N100P


MOSFET 1 Amps 1000V 14 Rds
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IXYS 0
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AUD 2.4239
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1 A1 kV15 OhmsN - Channel  - 55 C+ 150 C50 WSmd/SmtTO - 252 - 3TubeSi1 Channel20 V Enhancement  
TPH4R10ANL,L1Q(M


Transistor: N-MOSFET; unipolar; 100V; 70A; 67W; SOP8A
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Toshiba 0
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AUD 2.4241
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SIDR140DP-T1-RE3


MOSFET N-CHANNEL 25-V (D-S) MOSFET
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Vishay 0
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AUD 2.425
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PHP101NQ04T,127


Trans MOSFET N-CH 40V 75A 3-Pin(3+Tab) TO-220AB Rail
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NXP 0
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AUD 2.4257
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SIHG15N80AE-GE3


N-Channel 800V 13A (Tc) 156W (Tc) Through Hole TO-247AC
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Vishay 0
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AUD 2.4278
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13 A800 V350 mOhmsN - Channel 4 V- 55 C+ 150 C156 WThrough HoleTO - 247AC - 3TubeSi1 Channel- 30 V , + 30 V53 nCEnhancement  
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