MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB12NM50T4


MOSFET N-Ch 500 Volt 12 Amp
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 28
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AUD 3.6614
Multiples of: 1

12 A500 V350 mOhmsN - Channel  - 65 C+ 150 C160 WSmd/SmtD2PAKReelSi1 Channel30 V Enhancement  
SPA22N65G


MOSFET TO-247 RoHS
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Sinai Power 0
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AUD 2.3998
Multiples of: 1

                   
SPA24N50G


MOSFET TO-247 RoHS
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Sinai Power 0
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AUD 2.3998
Multiples of: 1

                   
SI7892BDP-T1-GE3


MOSFET 30V 25A 5.4W 4.2mohm @ 10V
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Vishay 0
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AUD 2.4
Multiples of: 1

         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
IXTY1R4N100P


MOSFET 1.4 Amps 1000V 11 Rds
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IXYS 0
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AUD 2.4
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1.4 A1 kV11 OhmsN - Channel  - 55 C+ 150 C63 WSmd/SmtTO - 252 - 3TubeSi1 Channel20 V Enhancement  
IPB60R170CFD7ATMA1


MOSFET HIGH POWER_NEW
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Infineon 0
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AUD 2.4
Multiples of: 1

14 A600 V170 mOhmsN - Channel 4.5 V- 55 C+ 150 C75 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V28 nCEnhancement  
FDWS86068-F085


MOSFET 80V N-Chnl Power Trench MOSFET
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ON Semiconductor 0
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AUD 2.4
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80 A100 V6.4 mOhmsN - Channel 2 V- 55 C+ 150 C214 WSmd/SmtDFN - 8Cut TapeSi1 Channel20 V43 nCEnhancementAec - Q101Powertrench
PSMN7R8-120PS


MOSFET, N-CH, 120V, 70, TO-220
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Nexperia 0
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AUD 2.4019
Multiples of: 1

   N Channel               
MMF60R115PTH


Trans MOSFET N-CH 600V 33A 3-Pin(3+Tab) TO-220F Tube
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Magnachip 0
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AUD 2.3995
Multiples of: 1000

33 A  n    255 Wthrough hole Rail/Tube    enhancement  
STFI13N60M2


N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 2.4029
Multiples of: 1

11 A650 V380 mOhmsn - channel 3 V- 55 C+ 150 C25 Wthrough holeI2PAKFP - 3Tube 1 channel25 V17 nC   
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