MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HY5208W


MOSFET N Trench 80V 320A (Tc) 4V @ 250uA 2 mΩ @ 160A,10V TO-247A-3L RoHS
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HUAYI 4
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AUD 2.4379
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STL8NH3LL


MOSFET N-Ch 30 Volt 8 Amp
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STMicroelectronics 0
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AUD 2.4192
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8 A30 V15 mOhmsn - channel  - 55 C+ 150 C2 Wsmd/smtPowerflat - 8Reelsi1 channel18 V enhancement  
VNB20N07-E


MOSFET N-Ch 70V 20A OmniFET
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STMicroelectronics 0
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AUD 2.4197
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20 A 50 mOhmsn - channel    83 Wsmd/smtTO - 263 - 3Tubesi1 channel 60 nCenhancementaec - q101 
GS-065-004-1-L


MOSFET 650V, 3.5A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled
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Gan Systems 0
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AUD 2.42
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3.5 A650 V1.194 OhmsN - Channel 1.4 V- 40 C+ 150 C Smd/SmtPDFN - 6Cut TapeGan Si1 Channel- 10 v to 7 V0.7 nCEnhancement  
FDB86135


N-Channel 100 V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 0
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AUD 2.4206
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75 A100 V3.5 mOhmsN - Channel  - 55 C+ 175 C227 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V   Powertrench
BUK661R6-30C,118


MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
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NXP 0
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AUD 2.4206
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120 A30 V1.4 mOhmsn - channel      SOT - 404 - 3Reelsi1 channel     
IRFS3207PBF


International Rectifier MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC
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Infineon 0
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AUD 2.4226
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180 A75 V4.5 mOhmsN - Channel20 V - 55 C+ 175 C330 WSmd/SmtD - PAK - 3Tube   180 nCEnhancement  
FDWS5360L-F085


Trans MOSFET N-CH 60V 60A Automotive T/R
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ON Semiconductor 0
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AUD 2.423
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TK10A80W-VB


800V 9A 540m@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.4231
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TK16A60W5-VB


600V 18A 230mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.4231
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